LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
•
Applications
Inverter, Interface, Driver
Features
1
2
3
LDTB114GKT1G
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
•
We declare that the material of product compliance with
RoHS requirements.
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
Each pin mounted on the recommended land
SC-89
1
BASE
Unit
V
V
V
mA
mW
C
C
3
COLLECTOR
R2
2
EMITTER
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
∗
Limits
−50
−50
−5
−500
200
150
−55
to
+150
DEVICE MARKING AND RESISTOR VALUES
Device
LDTB114GKT1G
LDTB114GKT3G
Marking
K7
K7
R1 (K)
R2 (K)
10
10
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff curren
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗
Characteristics of built-in transistor
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
f
T
∗
Min.
−50
−50
−5
−
−
−
56
7
−
Typ.
−
−
−
−
−
−
−
10
200
Max.
−
−
−
−0.5
−580
−0.3
−
13
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
I
C
= −50µA
I
C
= −1mA
I
E
= −720µA
V
CB
= −50V
V
EB
= −4V
I
C
/I
B
= −50mA/−2.5mA
I
C
= −50mA
, V
CE
= −5V
−
V
CE
= −10V
, I
E
=50mA
, f=100MHz
Conditions
1/3
LESHAN RADIO COMPANY, LTD.
LDTB114GKT1G
Electrical characteristic curves
1000
500
V
CE
=5V
Ta=25°C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Ta=100°C
−1
−500m
−200m
−100m
−50m
I
C
/I
B
=20
DC CURRENT GAIN : h
FE
200
100
50
Ta=
−40°C
Ta=100°C
Ta=25°C
20
10
5
2
1
−500µ −1m −2m
−5m −10m −20m
−50m −100m −200m −500m
−20m
−10m
−5m
−2m
−1m
−500µ −1m −2m
−5m −10m −20m
Ta=
−40°C
−50m−100m −200m −500m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current transfer ratio
vs. Collector current
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
2/3
LESHAN RADIO COMPANY, LTD.
LDTB114GKT1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
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