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B125S

Description
1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size178KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

B125S Overview

1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

B125S Parametric

Parameter NameAttribute value
Number of components4
Number of terminals4
Processing package description8.30 X 6.40 MM, 2.50 MM HEIGHT, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC, DIP-4
stateActive
Diode typeBRIDGE RECTIFIER DIODE
structureBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Maximum forward voltage1.1 V
jesd_30_codeR-PDSO-G4
Maximum non-repetitive peak forward current50 A
Phase1
Minimum operating temperature-50 Cel
Maximum operating temperature150 Cel
Maximum output current1 A
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
qualification_statusCOMMERCIAL
Maximum repetitive peak reverse voltage600 V
sub_categoryBridge Rectifier Diodes
surface mountYES
terminal coatingNOT SPECIFIED
Terminal formGULL WING
Terminal locationDUAL
dditional_featureUL RECOGNIZED
B40S-B500S
Glass Passivated Silicon Bridge Rectifiers
VOLTAGE RANGE
: 80 -- 1000 V
CURRENT:
0.8 A
Features
Rating to 1000 V
Low forward voltage drop
Small size,plastic case
Glass passivated junction
Weight: 0.016 ounces, 0.45grams
Mounting position: Any
DB-S
1± 0.1
7.9± 0.2
6.3± 0.2
8.3± 0.3
6.4± 0.1
0.3
1.2± 0.3
10± 0.6
8.3± 0.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%.
B40S B80S B125S B250S B380S B500S
UNITS
Maximum alternating input voltage
Repetitive peak reverse voltage
Maximum average forward
rectified output current
Peak forward surge current
8.3ms single half-sine-wave
Maximum forwand voltage drop
per element at 0.4 A
Maximum reverse current
@T
A
=25
at rated DC blocking voltage
per element
@T
A
=125
Thermal resistance junction to ambient air
Operating temperature range
Storage temperature range
@Tc= 50
V
VRMS
V
RRM
I
(AV)
I
FSM
V
F
I
R
0.5
R
θJA
T
j
T
STG
60
- 55 --- + 150
- 55 --- + 150
mA
K/W
50
80
110
160
170
250
0.8
40
1.1
10.0
420
600
560
800
700
1000
V
V
A
A
V
A
http://www.luguang.cn
mail:lge@luguang.cn
3.2±
0.2
5± 0.2
Dimensions in millimeters

B125S Related Products

B125S B250S B380S B40S B500S B80S
Description 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Number of components 4 4 4 4 4 4
Number of terminals 4 4 4 4 4 4
Processing package description 8.30 X 6.40 MM, 2.50 MM HEIGHT, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC, DIP-4 8.30 X 6.40 MM, 2.50 MM HEIGHT, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC, DIP-4 8.30 X 6.40 MM, 2.50 MM HEIGHT, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC, DIP-4 8.30 X 6.40 MM, 2.50 MM HEIGHT, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC, DIP-4 8.30 X 6.40 MM, 2.50 MM HEIGHT, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC, DIP-4 8.30 X 6.40 MM, 2.50 MM HEIGHT, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC, DIP-4
state Active Active Active Active Active Active
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
structure BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Maximum forward voltage 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
jesd_30_code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A
Phase 1 1 1 1 1 1
Minimum operating temperature -50 Cel -50 Cel -50 Cel -50 Cel -50 Cel -50 Cel
Maximum operating temperature 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Maximum repetitive peak reverse voltage 600 V 600 V 600 V 600 V 600 V 600 V
sub_category Bridge Rectifier Diodes Bridge Rectifier Diodes Bridge Rectifier Diodes Bridge Rectifier Diodes Bridge Rectifier Diodes Bridge Rectifier Diodes
surface mount YES YES YES YES YES YES
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
dditional_feature UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
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