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BR605

Description
6 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    Ordinary rectifier bridge   
File Size146KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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BR605 Overview

6 A, SILICON, BRIDGE RECTIFIER DIODE

BR605 Parametric

Parameter NameAttribute value
PackageBR3
Maximum recurrent peak reverse voltage50
Maximum average forward rectified curre3
Peak forward surge curre300
Maximum instantaneous forward voltage1.1
Maximum reverse curre10
TJ(℃)-55~+150
BR605-BR610
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
Features
Rating to 1000V PRV
Surge overload rating to 125 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
16.0± 0.4
10.8± 0.5
BR3
φ
1.1± 0.1
16.0± 0.4
10.8± 0.5
Lead solderable per MIL-STD-202 method 208
Mounting: thru hole for # 6 screw
mounting
φ
3.84 TYP.
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BR605 BR61
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current
@T
A
=50
BR62 BR64 BR66 BR68 BR610 UNITS
200
140
200
400
280
400
6.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 3.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
125
20 MIN
8.0± 0.4
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μ
A
mA
Operating junction temperature range
Storage temperature range
http://www.luguang.cn
mail:lge@luguang.cn

BR605 Related Products

BR605 BR61 BR610 BR62 BR64 BR66 BR68
Description 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE
Package BR3 BR3 BR3 BR3 BR3 BR3 BR3
Maximum recurrent peak reverse voltage 50 50 1000 200 400 600 800
Maximum instantaneous forward voltage 1.1 1.1 1.1 1.1 1.1 1.1 1.1
TJ(℃) -55~+150 -55~+150 -55~+150 -55~+150 -55~+150 -55~+150 -55~+150
Maximum average forward rectified curre 3 3 - 3 3 3 3
Peak forward surge curre 300 125 - 125 125 125 125
Maximum reverse curre 10 10 - 10 10 10 10
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