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BZT03D12

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    Zener diode   
File Size219KB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

BZT03D12 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

BZT03D12 Parametric

Parameter NameAttribute value
Case StyleDO-15
Pd(W)1.3
VZ(Min)10.8
VZ(Nom)12
VZ(Max)13.2
IZT(mA)50
IR(uA)3.0
VR(V)8.6
classDiodes
BZT03 Series
Zener Diodes
V
Z
:
6.2 -- 270 V
POWER DISSIPATION:
3.25
W
DO -- 15
Features
Hermetically sealed package
Clamping time in picoseconds
Mechanical Data
Case:JEDEC DO-15
Terminals: Axial leads solderable per MIL-
STD-202,Method 208
Polarity: Color band denotes cathods end
Weight: 0.014 ounces,0.39 grams
Mounting position: any
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics
Parameter
Total power dissipation at T
tp
=25℃ 
Power dissipation at T
A
=45℃
Forward voltage @I
F
=0.5A
Maximum thermal resistance
junction to ambient (Note 1)
Peak reverse power dissipation
tp=100µs square wave
Junction temperature
Storage temperature range
Note:1.On PC board with spacing 25mm
(T
A
=25℃ unless otherwise noted)
Symbol
P
tot
P
tot
V
F
R
θJA
P
ZSM
T
J
T
STG
Value
3.25
1.3
1.2
100
600
150
-55 to +150
Unit
W
W
V
℃/W
W
http://www.luguang.cn
mail:lge@luguang.cn
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