MAGX-000912-125L00
GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
Features
GaN depletion mode HEMT microwave transistor
Internally matched
Common source configuration
Broadband Class AB operation
RoHS Compliant
+50V Typical Operation
Production V1
18 Aug 11
MTTF of 114 years
(Channel Temperature < 200°C)
Applications
Avionics: Mode-S, TCAS, JTIDS, DME and TACAN.
Product Description
The MAGX-000912-125L00 is a gold metalized matched Gallium
Nitride (GaN) on Silicon Carbide RF power transistor optimized for
civilian and military pulsed avionics amplifier applications the 960
MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME
and TACAN . Using state of the art wafer fabrication processes,
these high performance transistors provide high gain, efficiency,
bandwidth, ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown voltages allow for
reliable and stable operation in extreme mismatched load
conditions unparalleled with older semiconductor technologies.
Typical RF Performance at Pout = 125W Peak
Freq
(MHz)
960
1030
1090
1150
1215
Pin
(W)
1.4
1.3
1.6
1.7
1.6
Gain
(dB)
19.7
19.8
18.9
18.6
18.9
Slope
(dB)
-
-
-
-
1.2
Id
(A)
3.9
4.0
4.1
4.1
4.0
Eff
(%)
64.4
61.6
60.4
61.4
61.9
Avg-Eff
(%)
-
-
-
-
61.9
RL
(dB)
-6.1
-11.9
-9.6
-9.3
-12.0
Droop
(dB)
0.3
0.3
0.3
0.3
0.3
Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows:
Vdd=50V, Idq=100mA (pulsed), F=960-1215 MHz, Pulse=128us, Duty=10%.
Ordering Information
MAGX-000912-125L00 125W GaN Power Transistor
MAGX-000912-SB0PPR Evaluation Fixture
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-000912-125L00
GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (V
DD
)
Supply Voltage (V
GS
)
Supply Current (I
D MAX
)
Input Power (P
IN
)
Absolute Max. Junction/Channel Temp
+65V
-8 to -2V
7.1 Apk
+37dBm
200ºC
Production V1
18 Aug 11
MTTF (T
J
<200°C)
Pulsed Power Dissipation at 85ºC
Thermal Resistance, (Tj = 70ºC)
V
DD
= 50V, I
DQ
= 100mA, Pout = 125W
128us Pulse / 10% Duty
Operating Temp
Storage Temp
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
114 years
230 Wpk
0.5ºC/W
-40 to +95ºC
-65 to +150ºC
See solder reflow profile
50V
>250V
MSL1
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Test Conditions
Symbol
Min
Typ
Max
Units
V
GS
= -8V, V
DS
= 175V
V
DS
= 5V, I
D
= 15.0mA
V
DS
= 5V, I
D
= 3.5mA
I
DS
V
GS (th)
G
M
-
-5
2.5
0.2
-3.8
3.6
6
-2
-
mA
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Feedback Capacitance
Not applicable—Input internally matched
V
DS
= 50V, V
GS
= -8V, F = 1MHz
V
DS
= 50V, V
GS
= -8V, F = 1MHz
C
ISS
C
OSS
C
RSS
N/A
-
-
N/A
11
1.1
N/A
-
-
pF
pF
pF
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-000912-125L00
GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
Electrical Specifications: T
C
= 25 ± 5°C (
Room Ambient
)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Production V1
18 Aug 11
RF FUNCTIONAL TESTS (V
DD
=
50V
,
I
DQ
=
100mA
,
128us / 10% duty, 960-1215MHz)
Input Power
Power Gain
Drain Efficiency
Load Mismatch Stability
Load Mismatch Tolerance
Pout = 125W Peak (12.5W avg)
Pout = 125W Peak (12.5W avg)
Pout = 125W Peak (12.5W avg)
Pout = 125W Peak (12.5W avg)
Pout = 125W Peak (12.5W avg)
P
IN
G
P
η
D
VSWR-S
VSWR-T
-
17.5
57
5:1
10:1
1.6
19.2
62
-
-
2.2
-
-
-
-
Wpk
dB
%
-
-
Test Fixture Impedance
Zif
F (MHz)
960
1030
1090
1150
1215
Z
IF
(Ω)
3.9 - j7.5
3.7 - j6.6
3.6 - j5.6
4.7 - j6.0
4.1 - j5.5
Z
OF
(Ω)
7.6 + j2.6
8.3 + j1.5
8.2 + j0.8
8.0 + j0.6
8.2 + j0.9
INPUT
NETWORK
Zof
OUTPUT
NETWORK
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-000912-125L00
GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
RF Power Transfer Curve (Output Power Vs. Input Power)
175
Production V1
18 Aug 11
150
Pout (W)
125
100
960 MHz
1030 MHz
1090 MHz
1150 MHz
1215 MHz
75
50
0.7
1.0
1.3
1.6
Pin (W)
1.9
2.2
2.5
2.8
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
76
68
60
52
960 MHz
1030 MHz
1090 MHz
1150 MHz
1215 MHz
Eff (%)
44
36
60
80
100
Pout (W)
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
120
140
160
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-000912-125L00
GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
Test Fixture Circuit Dimensions
Production V1
18 Aug 11
Test Fixture Assembly
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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