MAGX-001214-125L00
GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
Features
GaN depletion mode HEMT microwave transistor
Internally matched
Common source configuration
Broadband Class AB operation
RoHS Compliant
+50V Typical Operation
Production V1
18 Aug 11
MTTF of 114 years
(Channel Temperature < 200°C)
Applications
L-Band Pulsed Radar
Product Description
The MAGX-001214-125L00 is a gold metalized matched
Gallium Nitride (GaN) on Silicon Carbide RF power transistor
optimized for pulsed L-Band radar applications. Using state
of the art wafer fabrication processes, these high
performance transistors provide high gain, efficiency,
bandwidth, ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown voltages
allow for reliable and stable operation in extreme
mismatched load conditions unparalleled with older
semiconductor technologies.
Typical RF Performance at Pout = 125W Peak
Freq
(MHz)
1200
1250
1300
1350
1400
Pin
(W)
1.8
1.9
2.0
1.9
1.8
Gain
(dB)
18.3
18.1
18.0
18.1
18.4
Slope
(dB)
-
-
-
-
0.4
Id
(A)
4.0
4.2
4.4
4.3
3.9
Eff
(%)
43.0
59.0
56.5
57.7
62.9
Avg-Eff
(%)
-
-
-
-
59.8
RL
(dB)
-9.0
-11.6
-16.0
-19.0
-14.5
Droop
(dB)
0.4
0.6
0.6
0.5
0.3
Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows:
Vdd=50V, Idq=100mA (pulsed), F=1200-1400 MHz, Pulse=300us, Duty=10%.
Ordering Information
MAGX-001214-125L00 125W GaN Power Transistor
MAGX-001214-SB0PPR Evaluation Fixture
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001214-125L00
GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (V
DD
)
Supply Voltage (V
GS
)
Supply Current (I
DMAX
)
Input Power (P
IN
)
Absolute Max. Junction/Channel Temp
+65V
-8 to -2V
4.8 Apk
+37 dBm
200ºC
Production V1
18 Aug 11
MTTF (T
J
<200°C)
Pulsed Power Dissipation at 85ºC
Thermal Resistance, (Tj = 70ºC)
V
DD
= 50V, I
DQ
= 100mA, Pout = 125W
300us Pulse / 10% Duty
Operating Temp
Storage Temp
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
114 years
115 Wpk
1.0ºC/W
-40 to +95ºC
-65 to +150ºC
See solder reflow profile
50V
>250V
MSL1
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Test Conditions
Symbol
Min
Typ
Max
Units
V
GS
= -8V, V
DS
= 175V
V
DS
= 5V, I
D
= 15.0mA
V
DS
= 5V, I
D
= 3.5mA
I
DS
V
GS (th)
G
M
-
-5
2.5
0.2
-3.8
3.6
6
-2
-
mA
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Feedback Capacitance
Not applicable—Input internally matched
V
DS
= 50V, V
GS
= -8V, F = 1MHz
V
DS
= 50V, V
GS
= -8V, F = 1MHz
C
iSS
C
OSS
C
RSS
N/A
-
-
N/A
11
1.1
N/A
-
-
pF
pF
pF
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001214-125L00
GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
Electrical Specifications: T
C
= 25 ± 5°C (
Room Ambient
)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Production V1
18 Aug 11
RF FUNCTIONAL TESTS (V
DD
=
50V
,
I
DQ
=
100mA
,
300us / 10% duty, 1200-1400MHz)
Input Power
Power Gain
Drain Efficiency
Load Mismatch Stability
Load Mismatch Tolerance
Pout = 125Wpk (12.5W avg)
Pout = 125Wpk (12.5W avg)
Pout = 125Wpk (12.5W avg)
Pout = 125Wpk (12.5W avg)
Pout = 125Wpk (12.5W avg)
P
IN
G
P
η
D
VSWR-S
VSWR-T
-
17.2
54
5:1
10:1
1.9
18.1
59.8
-
-
2.4
-
-
-
-
Wpk
dB
%
-
-
Test Fixture Impedance
Zif
F (MHz)
1200
1250
1300
1350
1400
Z
IF
(Ω)
6.6 - j7.1
6.6 - j6.9
6.6 - j6.7
6.7 - j6.7
6.7 - j6.7
Z
OF
(Ω)
8.0 + j1.9
7.4 + j1.3
6.6 + j1.3
6.1 + j1.6
5.7 + j2.2
INPUT
NETWORK
Zof
OUTPUT
NETWORK
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001214-125L00
GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
RF Power Transfer Curve (Output Power Vs. Input Power)
150
Production V1
18 Aug 11
125
Pout (W)
100
75
1200 MHz
1300 MHz
1400 MHz
50
25
0.4
0.8
1.2
1.6
Pin (W)
2.0
2.4
2.8
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
75
70
65
Drain Eff (%)
60
55
50
45
40
35
35
50
65
80
95
Pout (W)
110
125
140
155
1200 MHz
1300 MHz
1400 MHz
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001214-125L00
GaN on SiC HEMT Pulsed Power Transistor
125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
Test Fixture Circuit Dimensions
Production V1
18 Aug 11
Test Fixture Assembly
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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