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FMP76-01T

Description
Power Field-Effect Transistor, 62A I(D), 100V, 0.011ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5
CategoryDiscrete semiconductor    The transistor   
File Size107KB,4 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
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FMP76-01T Overview

Power Field-Effect Transistor, 62A I(D), 100V, 0.011ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5

FMP76-01T Parametric

Parameter NameAttribute value
MakerLittelfuse
package instructionIN-LINE, R-PSIP-T5
Reach Compliance Codecompliant
Other featuresAVALANCHE RATED, UL RECOGNIZED
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionISOLATED
ConfigurationCOMPLEX
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)62 A
Maximum drain-source on-resistance0.011 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T5
Number of components2
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)300 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Advance Technical Information
Trench
TM
P & N-Channel
Power MOSFET
Common Drain Topology
FMP76-01T
V
DSS
3
4
5
4
3
P CH.
- 100V
- 54A
24mΩ
Ω
70ns
N CH.
100V
62A
11mΩ
Ω
67ns
T1
T2
I
D25
R
DS(on)
t
rr(typ)
1
1
2
2
ISOPLUS i4-Pak
TM
Symbol
T
J
T
JM
T
stg
V
ISOLD
T
L
T
SOLD
F
C
50/60H
Z
, RMS, t = 1min, leads-to-tab
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
Test Conditions
Maximum Ratings
-55 ... +150
150
-55 ... +150
2500
300
260
20..120 / 4.5..27
°C
°C
°C
~V
°C
°C
N/lb.
Features
Symbol
C
P
d
S
,d
A
d
S
,d
A
Weight
Test Conditions
Coupling capacitance between shorted
pins and mounting tab in the case
pin - pin
pin - backside metal
1.7
5.5
9
Characteristic Values
Min.
Typ.
Max.
40
pF
mm
mm
g
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
Low Q
G
Low Drain-to-Tab capacitance
Low package inductance
1
Isolated Tab
5
P - CHANNEL
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
- 100
- 100
±
20
±
30
- 54
- 230
- 38
1.0
132
V
V
V
V
A
A
A
J
W
Advantages
Low gate drive requirement
High power density
Low drain to ground capacitance
Fast switching
Applications
DC and AC motor drives
Class AB audio amplifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS100037(09/08)

FMP76-01T Related Products

FMP76-01T
Description Power Field-Effect Transistor, 62A I(D), 100V, 0.011ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5
Maker Littelfuse
package instruction IN-LINE, R-PSIP-T5
Reach Compliance Code compliant
Other features AVALANCHE RATED, UL RECOGNIZED
Avalanche Energy Efficiency Rating (Eas) 500 mJ
Shell connection ISOLATED
Configuration COMPLEX
Minimum drain-source breakdown voltage 100 V
Maximum drain current (ID) 62 A
Maximum drain-source on-resistance 0.011 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T5
Number of components 2
Number of terminals 5
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form IN-LINE
Polarity/channel type N-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM) 300 A
Certification status Not Qualified
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
transistor applications SWITCHING
Transistor component materials SILICON
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