http://www.fujielectric.com/products/semiconductor/
6MBP25VBA120-50
IGBT MODULE (V series)
1200V / 25A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• Compatible with existing IPM-N series packages
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
IGBT Modules
Maximum Ratings and Characteristics
Absolute Maximum Ratings (T
C
=25ºC, V
CC
=15V unless otherwise specified)
Items
Collector-Emitter Voltage (*1)
Short Circuit Voltage (*2)
Collector Current
DC
1ms
Duty=100% (*3)
1 device (*4)
Symbol
V
CES
V
SC
Ic
Ic pulse
-Ic
Pc
V
CC
Vin
V
ALM
I
ALM
Tj
Topr
Tstg
Tsol
V
iso
-
Min.
0
200
-
-
-
-
-0.5
-0.5
-0.5
-
-
-20
-40
-
-
-
Max.
1200
800
25
50
25
151
20
V
CC
+0.5
V
CC
20
150
110
125
260
AC2500
1.7
Units
V
V
A
A
A
W
V
V
V
mA
ºC
ºC
ºC
ºC
Vrms
Nm
Collector Power Dissipation
Supply Voltage of Pre-Driver (*5)
Input Signal Voltage (*6)
Alarm Signal Voltage (*7)
Alarm Signal Current (*8)
Junction Temperature
Operating Case Temperature
Storage Temperature
Solder Temperature (*9)
Isolating Voltage (*10)
Screw Torque
Mounting (M4)
Note *1: V
CES
shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W)-N.
Note *2: In the case of V
CC
=16.5V,design the load inductance to be over 1μH.
Note *3: Duty=125ºC/Rth(j-c)D /(I
F
×V
F
Max.)×100
Note *4: P
C
=125ºC/Rth(j-c)Q
Note *5: V
CC
shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13.
Note *6: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16~18 and 13.
Note *7: V
ALM
shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13.
Note *8: I
ALM
shall be applied to the input current to terminal No.2,6,10 and 19.
Note *9: Immersion time 10±1sec. 1time.
Note *10: Terminal to base, 50/60Hz sine wave 1minute.
1
6MBP25VBA120-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Electrical Characteristics (Tj=25ºC, V
CC
=15V unless otherwise specified)
Items
Collector Current at off signal input
Inverter
Collector-Emitter saturation voltage
Forward voltage of FWD
Symbol
I
CES
V
CE(sat)
V
F
ton
toff
trr
Iccp
Iccn
Vinth(on)
Input signal threshold voltage
Vinth(off)
Over Current Protection Level
I
OC
Over Current Protection Delay time
t
dOC
Short Circuit Protection Delay time
t
SC
IGBT Chips Over Heating Protection Temperature Level
T
jOH
Over Heating Protection Hysteresis
T
jH
Under Voltage Protection Level
V
UV
Under Voltage Protection Hysteresis
V
H
t
ALM(OC)
t
ALM(UV)
Alarm Signal Hold Time
t
ALM(TjOH)
Resistance for current limit
R
ALM
Supply current of P-side pre-driver (per one unit)
Supply current of N-side pre-driver
Conditions
V
CE
=1200V
I
C
=25A
I
F
=25A
Terminal
Chip
Terminal
Chip
Min.
-
-
-
-
-
1.1
-
-
-
-
1.2
1.5
38
-
-
150
-
11.0
0.2
1.0
2.5
5.0
960
Typ.
-
-
1.70
-
2.10
-
-
-
-
-
1.4
1.7
-
5
2
-
20
-
0.5
2.0
4.0
8.0
1265
Max.
1.0
2.20
-
2.60
-
-
2.1
0.3
10
30
1.6
1.9
-
-
3
-
-
12.5
-
2.4
4.9
11.0
1570
Units
mA
V
V
V
V
µs
µs
µs
mA
mA
V
V
A
µs
µs
ºC
ºC
V
V
ms
ms
ms
Ω
Switching time
V
DC
=600V, Tj=125ºC
Ic=25A
V
DC
=600V
I
F
=25A
Switching Frequency= 0-15kHz
Tc=-20~110ºC
Vin-GND
ON
OFF
Tj=125ºC
Tj=125ºC
Tj=125ºC
Surface of IGBT Chips
ALM-GND
Tc=-20~110ºC
V
CC
10V
Thermal Characteristics (T
C
= 25ºC)
Items
Junction to Case Thermal Resistance (*10)
Case to Fin Thermal Resistance with Compound
Note *10: For 1device, the measurement point of the case is just under the chip.
Inverter
IGBT
FWD
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Min.
-
-
-
Typ.
-
-
0.05
Max.
0.83
1.16
-
Units
°C/W
°C/W
°C/W
Noise Immunity (V
DC
=300V, V
CC
=15V)
Items
Common mode rectangular noise
Conditions
Pulse width 1μs, polarity ±, 10 minute
Judge : no over-current, no miss operating
Min.
±2.0
Typ.
-
Max.
-
Units
kV
Recommended Operating Conditions
Items
DC Bus Voltage
Power Supply Voltage of Pre-Driver
Arm shoot through blocking time for IPM's input signal
Screw Torque (M4)
Symbol
V
DC
V
CC
tdead
-
Min.
-
13.5
1.0
1.3
Typ.
-
15.0
-
-
Max.
800
16.5
-
1.7
Units
V
V
µs
Nm
2
6MBP25VBA120-50
Block Diagram
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
VccU
VinU
ALMU
GNDU
VccV
VinV
ALM V
GNDV
VccW
VinW
ALM W
GNDW
Vcc
VinX
Pre-Driver
R
ALM
Pre-Driver
R
ALM
Pre-Driver
R
ALM
Pre-Driver
P
U
V
W
GND
VinY
Pre-Driver
VinZ
Pre-Driver
ALM
R
ALM
N
Pre-drivers include following functions
1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
3
6MBP25VBA120-50
Characteristics (Representative)
Power supply current vs. Switching frequency
Tj=25ºC (typ.)
30
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Input signal threshold voltage
vs. Power supply boltage (typ.)
3
N-side
P-side
Power supply current : Icc [mA]
Vcc=17V
Vcc=15V
Vcc=13V
Input signal threshold voltage :
Vinth (on), Vinth (off) [V]
Tc=25~125ºC
2.5
20
2
V
inth (off)
1.5
V
inth (on)
1
10
Vcc=17V
Vcc=15V
Vcc=13V
0.5
0
0
0
5
10
15
20
25
12
13
14
15
16
17
18
Switchig frequency : fsw [kHz]
Power supply voltage : Vcc [V]
Under voltage vs. Junction temperature (typ.)
15
1
Under voltage hysterisis
vs. Junction temperature (typ.)
Under voltage hysterisis : V
H
[V]
12
0.8
Under voltage : V
UV
[V]
9
0.6
6
0.4
3
0.2
0
0
20
40
60
80
100
120
140
0
0
20
40
60
80
100
120
140
Junction temperature : Tj [ºC]
Junction temperature : Tj [ºC]
Alarm hold time vs. Power supply voltage (typ.)
10
200
Over heating characteristics
T
joH
, T
jH
vs. Vcc (typ.)
T
joH
8
Over heating protection : T
joH
[ºC]
OH hysterisis : T
jH
[ºC]
tALM(TjOH)
Alarm hold time : T
ALM
[msec]
150
6
100
4
2
tALM(OC)
50
T
jH
0
12
13
14
15
16
17
18
0
12
13
14
15
16
17
18
Power supply voltage : Vcc [V]
Power supply voltage : Vcc [V]
4
6MBP25VBA120-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Collector current vs. collector-Emitter voltage
Tj=25ºC [Chip] (typ.)
40
Collector current vs. collector-Emitter voltage
Tj=25ºC [Terminal] (typ.)
40
Vcc=15V
Vcc=17V
Vcc=13V
Collector current : Ic [A]
Vcc=15V
Vcc=17V
Vcc=13V
Collector current : Ic [A]
30
30
20
20
10
10
0
0
0.5
1
1.5
2
2.5
3
0
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : V
CE
[V]
Collector-Emitter voltage : V
CE
[V]
Collector current vs. collector-Emitter voltage
Tj=125ºC [Chip] (typ.)
40
Collector current vs. collector-Emitter voltage
Tj=125ºC [Terminal] (typ.)
40
Vcc=15V
Vcc=15V
Collector current : Ic [A]
20
Collector current : Ic [A]
30
Vcc=17V
Vcc=13V
30
Vcc=17V
Vcc=13V
20
10
10
0
0
0.5
1
1.5
2
2.5
3
0
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : V
CE
[V]
Collector-Emitter voltage : V
CE
[V]
Forward current vs. Forward voltage
[Chip] (typ.)
40
40
Forward current vs. Forward voltage
[Terminal] (typ.)
Tj=25ºC
Forward current : I
F
[A]
Forward current : I
F
[A]
30
30
Tj=25ºC
Tj=125ºC
20
Tj=125ºC
20
10
10
0
0
0.5
1
1.5
2
2.5
3
0
0
0.5
1
1.5
2
2.5
3
Forward voltage : V
F
[V]
Forward voltage : V
F
[V]
5
Microcontroller MCU
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