http://www.fujielectric.com/products/semiconductor/
FGW30N120H
Discrete IGBT (High-Speed V series)
1200V / 30A
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Discrete IGBT
Features
Applications
Items
Collector-Emitter voltage
Gate-Emitter voltage
DC Collector Current
Absolute Maximum Ratings (at T
C
=25°C unless otherwise specified)
Symbols
V
CES
V
GES
I
C@25
I
C@100
I
CP
-
t
SC
Maximum Ratings and Characteristics
Equivalent circuit
Pulsed Collector Current
Turn-Off Safe Operating Area
Short Circuit Withstand Time
Maximum Power Dissipation
P
D
Operating Junction Temperature
T
j
Storage Temperature
T
stg
Note *1 : Pulse width limited by Tjmax.
Characteristics Units
Remarks
1200
V
±20
V
53
A
T
C
=25°C, T
j
=150°C
30
A
T
C
=100°C, T
j
=150°C
90
A
Note *1
90
A
V
CE
≤1200V, T
j
≤175°C
V
CC
≤600V, V
GE
=12V
5
μs
T
j
≤150°C
260
W
T
C
=25°C
-40 ~ +175
°C
-55 ~ +175
°C
Collector
Gate
Emitter
Characteristics
min.
typ.
max.
1200
-
-
-
-
250
-
-
2
-
-
200
4.0
5.0
6.0
-
1.8
2.34
-
2.3
-
-
2350
-
-
105
-
-
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
230
28
28
260
38
1.6
1.5
30
30
300
65
2.8
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
V
µA
mA
nA
V
V
pF
nC
Electrical characteristics (at T
j
= 25°C unless otherwise specified)
Symbols
V
(BR)CES
I
CES
I
GES
V
GE (th)
V
CE (sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Items
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Conditions
I
C
= 50μA, V
GE
= 0V
V
CE
= 1200V, V
GE
= 0V
V
CE
= 0V, V
GE
= ±20V
V
CE
= +20V, I
C
= 30mA
V
GE
= +15V, I
C
= 30A
T
j
=25°C
T
j
=175°C
T
j
=25°C
T
j
=175°C
V
CE
=25V
V
GE
=0V
f=1MHz
V
CC
= 600V
I
C
= 30A
V
GE
= 15V
T
j
= 25°C
V
CC
= 600V
I
C
= 30A
V
GE
= 15V
R
G
= 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW20S120J) reverse recovery.
T
j
= 175°C
V
CC
= 600V
I
C
= 30A
V
GE
= 15V
R
G
= 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW20S120J) reverse recovery.
ns
mJ
ns
mJ
Thermal resistance characteristics
Items
Thermal Resistance, Junction-Ambient
Thermal Resistance,Junction to Case
Symbols
R
th(j-a)
R
th(j-c)_IGBT
Conditions
-
-
Characteristics
min.
typ.
max.
-
-
50
-
-
0.568
Units
°C/W
1
FGW30N120H
Characteristics (Representative)
Graph.1
DC Collector Current vs T
V
≥+15V,
T
≤175º
C
GE
j
http://www.fujielectric.com/products/semiconductor/
Discrete IGBT
C
Graph.2
Collector Current vs. switching frequency
V =+15V, T
≤175º
C, V =600V, D=0.5,
R =10Ω, T =100
º
C
GE
G
C
CC
C
80
140
70
120
60
50
T
j
≤175℃
Switching frequency fs [kHz]
125
150
175
100
Collector current I
C
[A]
80
40
60
30
40
20
10
20
0
25
50
75
100
0
0
10
20
30
40
50
Case Temperature [
°
C]
Collector-Emitter corrent : I
CE
[A]
Graph.3
Typical Output Characteristics (V -I )
T =25
º
C
CE
C
j
Graph.4
Typical Output Characteristics (V -I )
T =175
º
C
CE
C
j
50
50
V
GE
=20V
15V
40
V
GE
=20V
12V
10V
40
12V
15V
10V
8V
8V
30
30
I
C
[A]
I
C
[A]
20
20
10
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
CE
[V]
V
CE
[V]
Graph.5
Typical Transfer Characteristics
V =+15V
GE
Graph.6
Gate Threshold Voltage vs. T
I =30mA, V =20V
C
CE
j
50
8
7
40
Gate Threshold Voltage V
GE(th)
[V]
6
max.
typ.
min.
30
5
I
C
[A]
T
j
=175℃
20
T
j
=25℃
4
3
2
10
1
0
0
2
4
6
8
10
0
-50
-25
0
25
50
75
100
125
150
175
V
GE
[V]
T
j
[℃]
2
FGW30N120H
http://www.fujielectric.com/products/semiconductor/
Discrete IGBT
Graph.7
Typical Capacitance
V =0V,f=1MHz,T =25°C
GE
j
Graph.8
Typical Gate Charge
V =600V,I =30A,T =25°C
CC
C
j
10
4
20
Cies
10
3
15
V
CC
=600V
Coes
Cres
C [pF]
10
V
GE
[V]
2
10
10
1
5
10
0
0
B
10
-2
10
-1
10
V
CE
[V]
0
10
1
0
50
100
150
200
250
300
Q
G
[nC]
Graph.9
Typical switching time vs. I
T =175°C,V =600V,L=500µH
V =15V,R =10Ω
C
j
CC
GE
G
Graph.10
Typical switching time vs. R
T =175°C,V =600V,I =30A,L=500µH
V =15V
G
j
CC
C
GE
1000
1000
t
d(off)
t
d(off)
Switching Times [nsec]
Switching Times [nsec]
100
t
f
t
d(on)
100
t
f
t
d(on)
t
r
10
t
r
10
1
0
10
20
30
40
50
60
1
0
10
20
30
40
50
60
Collector Current I
C
[A]
Gate Resistor R
G
[Ω]
Graph.11
Typical switching losses vs. I
T =175°C,V =600V,L=500µH
V =15V,R =10Ω
j
CC
GE
G
C
Graph.12
Typical switching losses vs. R
T =175°C,V =600V,I =30A,L=500µH
V =15V
G
j
CC
C
GE
6
6
5
5
Switching Energy Losses [mJ]
4
Switching Energy Losses [mJ]
E
on
4
E
on
3
3
E
off
E
off
2
2
1
1
0
0
10
20
30
40
50
60
0
0
10
20
30
40
50
60
Collector Current I
C
[A]
Gate Resistor R
G
[Ω]
3
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