http://www.fujielectric.com/products/semiconductor/
FGW75N60H
Discrete IGBT (High-Speed V series)
600V / 75A
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Discrete IGBT
Features
Applications
Items
Collector-Emitter Voltage
Gate-Emitter Voltage
DC Collector Current
Absolute Maximum Ratings (at T
C
=25°C unless otherwise specified)
Symbols
V
CES
V
GES
I
C@25
I
C@100
I
CP
-
t
SC
Characteristics Units
600
V
±20
V
100
75
225
225
5
500
-40 ~ +175
-55 ~ +175
A
A
A
A
μs
W
°C
°C
Maximum Ratings and Characteristics
Equivalent circuit
Remarks
Collector
Pulsed Collector Current
Turn-Off Safe Operating Area
Short Circuit Withstand Time
Maximum Power Dissipation
P
D
Operating Junction Temperature
T
j
Storage Temperature
T
stg
Note *1 : Current value limited by bonding wire.
Note *2 : Pulse width limited by Tjmax.
T
C
=25°C, T
j
=150°C
Note *1
T
C
=100°C, T
j
=150°C
Note *2
V
CE
≤600V, T
j
≤175°C
V
CC
≤300V, V
GE
=12V
T
j
≤150°C
T
C
=25°C
Gate
Emitter
Electrical characteristics (at T
j
= 25°C unless otherwise specified)
Symbols
V
(BR)CES
I
CES
I
GES
V
GE (th)
V
CE (sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Items
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Conditions
I
C
= 250μA, V
GE
= 0V
V
CE
= 600V, V
GE
= 0V
V
CE
= 0V, V
GE
= ±20V
V
CE
= +20V, I
C
= 75mA
V
GE
= +15V, I
C
= 75A
T
j
=25°C
T
j
=175°C
T
j
=25°C
T
j
=175°C
V
CE
=25V
V
GE
=0V
f=1MHz
V
CC
= 400V
I
C
= 75A
V
GE
= 15V
T
j
= 25°C
V
CC
= 400V
I
C
= 75A
V
GE
= 15V
R
G
= 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW35S60L) reverse recovery.
T
j
= 175°C
V
CC
= 400V
I
C
= 75A
V
GE
= 15V
R
G
= 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW35S60L) reverse recovery.
Characteristics
min.
typ.
max.
600
-
-
-
-
250
-
-
10
-
-
200
4.0
5.0
6.0
-
1.50
1.95
-
1.80
-
-
6150
-
-
300
-
-
240
-
-
-
-
-
-
-
-
-
-
-
-
-
-
460
45
130
450
105
3.0
4.2
45
130
490
120
4.3
4.8
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
V
µA
mA
nA
V
V
pF
nC
ns
mJ
ns
mJ
Thermal resistance characteristics
Items
Thermal Resistance, Junction-Ambient
Thermal Resistance, Junction to Case
Symbols
R
th(j-a)
R
th(j-c)
Conditions
-
-
Characteristics
min.
typ.
max.
-
-
50
-
-
0.298
Units
°C/W
1
FGW75N60H
Characteristics (Representative)
Graph.1
DC Collector Current vs T
V
≥+15V,
T
≤175º
C
GE
j
http://www.fujielectric.com/products/semiconductor/
Discrete IGBT
C
Graph.2
Collector Current vs. switching frequency
V =+15V, T
≤175º
C, V =400V, D=0.5,
R =10Ω, T =100
º
C
GE
G
C
CC
C
140
100
120
T
j
≤175℃
80
Switching frequency fs [kHz]
150
175
100
80
Collector current I
C
[A]
60
60
40
40
20
20
0
25
50
75
100
125
0
0
20
40
60
80
100
120
Case Temperature [
°
C]
Collector-Emitter corrent : I
CE
[A]
Graph.3
Typical Output Characteristics (V -I )
T =25
º
C
CE
C
j
Graph.4
Typical Output Characteristics (V -I )
T =175
º
C
CE
C
j
150
p
V
GE
=20V
j
150
125
15V
12V
125
V
GE
=20V
8V
15V
100
10V
12V
10V
8V
100
I
C
[A]
75
I
C
[A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
75
50
50
25
25
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
CE
[V]
V
CE
[V]
Graph.5
Typical Transfer Characteristics
V =+15V
GE
Graph.6
Gate Threshold Voltage vs. T
I =75mA, V =20V
C
CE
j
120
8
7
100
80
Gate Threshold Voltage V
GE(th)
[V]
6
max.
typ.
min.
5
I
C
[A]
60
4
T
j
=175℃
40
T
j
=25℃
3
2
20
1
0
0
2
4
6
8
10
0
-50
-25
0
25
50
75
100
125
150
175
V
GE
[V]
T
j
[℃]
2
FGW75N60H
http://www.fujielectric.com/products/semiconductor/
Discrete IGBT
Graph.7
Typical Capacitance
V =0V,f=1MHz,T =25°C
GE
j
Graph.8
Typical Gate Charge
V =400V,I =75A,T =25°C
CC
C
j
20
10
4
Cies
15
V
CC
=400V
C [pF]
10
3
V
GE
[V]
Coes
Cres
10
2
10
5
10
1
0
B
10
-2
10
-1
10
0
10
1
0
100
200
300
400
500
600
V
CE
[V]
Q
G
[nC]
Graph.9
Typical switching time vs. I
T =175°C,V =400V,L=500µH
V =15V,R =10Ω
C
j
CC
GE
G
Graph.10
Typical switching time vs. R
T =175°C,V =400V,I =75A,L=500µH
V =15V
G
j
CC
C
GE
1000
t
d(off)
1000
t
d(off)
t
r
Switching Times [nsec]
Switching Times [nsec]
t
f
100
100
t
f
t
d(on)
t
d(on)
10
t
r
10
1
0
20
40
60
80
100
120
140
1
0
10
20
30
40
50
60
Collector Current I
C
[A]
Gate Resistor R
G
[Ω]
Graph.11
Typical switching losses vs. I
T =175°C,V =400V,L=500µH
V =15V,R =10Ω
j
CC
GE
G
C
Graph.12
Typical switching losses vs. R
T =175°C,V =400V,I =75A,L=500µH
V =15V
G
j
CC
C
GE
12
12
10
10
Switching Energy Losses [mJ]
8
Switching Energy Losses [mJ]
E
on
8
E
off
E
on
6
6
E
off
4
4
2
2
0
0
20
40
60
80
100
120
140
0
0
10
20
30
40
50
60
Collector Current I
C
[A]
Gate Resistor R
G
[Ω]
3
PCB Design
京公网安备 11010802033920号
EEWORLD
