2N4126-AMMO datasheet, PDF - EEWORLD Datasheet

2N4126-AMMO: DescriptionTRANSISTOR 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size43KB，2 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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2N4126-AMMO Overview

TRANSISTOR 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-based maximum capacity	4.5 pF
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power consumption environment	1 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.4 V
Base Number Matches	1

	2N4126-AMMO	2N4125-AMMO
Description	TRANSISTOR 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal	TRANSISTOR 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A
Collector-based maximum capacity	4.5 pF	4.5 pF
Collector-emitter maximum voltage	25 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	25
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP
Maximum power consumption environment	1 W	1 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	200 MHz
VCEsat-Max	0.4 V	0.4 V
Base Number Matches	1	1

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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