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2SC3042L

Description
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size109KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC3042L Overview

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN

2SC3042L Parametric

Parameter NameAttribute value
Parts packaging codeTO-218
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
Maximum collector current (IC)12 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment100 W
Maximum power dissipation(Abs)2.5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
Ordering number:EN938B
NPN Triple Diffused Planar Silicon Transistor
2SC3042
400V/12A Switching Regulator Applications
Features
· High breakdown voltage (V
CBO
≥500V).
· Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm
2022A
[2SC3042]
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Conditions
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
500
400
7
12
Unit
V
V
V
A
A
A
W
W
PW≤300μs, Duty Cycle≤10%
25
4
2.5
Tc=25˚C
Tj
Tstg
100
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
N
50
Conditions
VCB=400V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1.6A
VCE=5V, IC=8A
IC=8A, IB=1.6A
IC=8A, IB=1.6A
Ratings
min
typ
max
10
10
15*
8
1.0
1.5
50*
Unit
µA
µA
V
V
* : The h
FE
1 of the 2SC3042 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
15
L
30
20
M
40
30
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3098HA (KT)/4147KI/3095MW, TS No.938–1/4

2SC3042L Related Products

2SC3042L 2SC3042M
Description Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
Parts packaging code TO-218 TO-218
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 2 2
Reach Compliance Code unknow unknow
Other features HIGH RELIABILITY HIGH RELIABILITY
Maximum collector current (IC) 12 A 12 A
Collector-emitter maximum voltage 400 V 400 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 15 20
JEDEC-95 code TO-218 TO-218
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 140 °C 140 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Maximum power consumption environment 100 W 100 W
Maximum power dissipation(Abs) 2.5 W 2.5 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz
Base Number Matches 1 1
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