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BZX79C4V7T26A

Description
Zener Diode, 4.7V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35
CategoryDiscrete semiconductor    diode   
File Size21KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

BZX79C4V7T26A Overview

Zener Diode, 4.7V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35

BZX79C4V7T26A Parametric

Parameter NameAttribute value
MakerFairchild
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage4.7 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance5%
Working test current5 mA
BZX79C 3V3 - BZX79C 33 Series
Discrete POWER & Signal
Technologies
BZX79C 3V3 - 33 Series Half Watt Zeners
Absolute Maximum Ratings*
Parameter
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10 seconds)
Total Device Dissipation
Derate above 25°C
Surge Power**
TA = 25°C unless otherwise noted
Tolerance: C = 5%
Value
-65 to +200
+ 200
+ 230
500
4.0
30
Units
°C
°C
°C
mW
mW/°C
W
*
These ratings are limiting values above which the serviceability of the diode may be impaired.
**
Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
DO-35
Electrical Characteristics
Device
MIN
BZX79C 3V3
BZX79C 3V6
BZX79C 3V9
BZX79C 4V3
BZX79C 4V7
BZX79C 5V1
BZX79C 5V6
BZX79C 6V2
BZX79C 6V8
BZX79C 7V5
BZX79C 8V2
BZX79C 9V1
BZX79C 10
BZX79C 11
BZX79C 12
BZX79C 13
BZX79C 15
BZX79C 16
BZX79C 18
BZX79C 20
BZX79C 22
BZX79C 24
BZX79C 27
BZX79C 30
BZX79C 33
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
TA = 25°C unless otherwise noted
V
Z
*
(V)
MAX
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
Z
Z
(Ω)
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
@
I
ZT
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.0
2.0
2.0
Z
ZK
(Ω)
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
@
I
ZT
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
V
R
(V)
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
@
I
R
(µA)
25
15
10
5.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.10
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
T
C
(mV/°C)
MIN
MAX
- 3.5
- 3.5
- 3.5
- 3.5
- 3.5
- 2.7
- 2.0
+ 0.4
+ 1.2
+ 2.5
+ 3.2
+ 3.8
+ 4.5
+ 5.4
+ 6.0
- 7.0
- 9.2
+ 10.4
+ 12.4
+ 14.4
+ 16.4
+ 18.4
+ 21.4
+ 24.4
+ 27.4
0.0
0.0
+ 0.3
+ 1.0
+ 0.2
+ 1.2
+ 2.5
+ 3.7
+ 4.5
+ 5.3
+ 6.2
+ 7.0
+ 8.0
+ 9.0
+ 10
+ 11
+ 13
+ 14
+ 16
+ 18
+ 20
+ 22
+ 25.3
+ 29.4
+ 33.4
V
F
Foward Voltage = 1.5 V Maximum @ I
F
= 100 mA for all BZX 79 series
*
Pulse Test: Pulse Width
£
300
ms,
Duty Cycle
£
2.0%
ã
1997 Fairchild Semiconductor Corporation
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