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PJE260N02

Description
Small Signal Mosfet Small Signal MOSFET
CategoryDiscrete semiconductor   
File Size404KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJE260N02 Overview

Small Signal Mosfet Small Signal MOSFET

Features

Product Name: Small Signal Mosfet Small Signal MOSFET


Product model: PJE260N02


Product parameters:


Channel: N


Configuration: Single


Drain-Source Voltage: VDSS: 20V


Gate-Source Voltage Maximum Gate-Source Voltage: VGSS: 6V


Drain Current: ID: 0.78A


Static Drain-Source On-Resistance: Vgs=4.5V,Rdson (max.):0.26Ω



Package: SOT-523



PJE260N02 Preview

Download Datasheet
PJE260N02
N-Channel, 20V, 0.78A, Small Signal MOSFET
FEATURES
• Supper high density cell design for extremely low Rds(on)
• Exceptional ON resistance and maximum DC current capability
• Driver: Relays, Solenolds, Lamps, Hammers
• Power supply converters circuit
• Load/Power Switching for potable device
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.013(0.33)
0.009(0.23)
0.052(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
0.044(1.10)
0.035(0.90)
0.067(1.70)
0.059(1.50)
0.024(0.60)
0.019(0.50)
MECHANICAL DATA
Case : SOT-523 plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Approx Weight : 0.002 grams
Marking : 26
0.007(0.17)
0.002(0.07)
0.012(0.30)
0.004(0.10)
Electrical Characteristics (T
A
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note1)
Pulsed Drain Current
Maximum Power Dissipation (Note1)
Operating Junction and Storage Temperature Range
Junction-to Ambient Thermal Resistance (Note1)
NOTE : 1.Mounted on min. pad FR-4 PCB.
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J,
T
STG
R
ΘJA
Limit
20
+6
0.78
2.34
0.22
-55 to +150
576
o
Units
V
V
A
A
W
o
C
C/W
April 26.2012-REV.00
PAGE . 1
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