BYD33KT/R datasheet, PDF - EEWORLD Datasheet

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BYD33KT/R: DescriptionRectifier Diode, 1 Element, 1.3A, 800V V(RRM),; CategoryDiscrete semiconductor diode; File Size619KB，11 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BYD33KT/R Overview

Rectifier Diode, 1 Element, 1.3A, 800V V(RRM),

BYD33KT/R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JESD-609 code	e0
Maximum non-repetitive peak forward current	20 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	1.3 A
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	0.3 µs
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

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BYD33KT/R Related Products

	BYD33KT/R	BYD33KAMO	BYD33GT/R	BYD33UT/R	BYD33JT/R	BYD33MAMO
Description	Rectifier Diode, 1 Element, 1.3A, 800V V(RRM),	Rectifier Diode, 1 Element, 1.3A, 800V V(RRM),	Rectifier Diode, 1 Element, 1.3A, 400V V(RRM),	Rectifier Diode, 1 Element, 1.3A, 1200V V(RRM),	Rectifier Diode, 1 Element, 1.3A, 600V V(RRM),	Rectifier Diode, 1 Element, 1.3A, 1000V V(RRM),
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
JESD-609 code	e0	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	20 A	20 A	20 A	20 A	20 A	20 A
Number of components	1	1	1	1	1	1
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	1.3 A	1.3 A	1.3 A	1.3 A	1.3 A	1.3 A
Maximum repetitive peak reverse voltage	800 V	800 V	400 V	1200 V	600 V	1000 V
Maximum reverse recovery time	0.3 µs	0.3 µs	0.25 µs	0.5 µs	0.25 µs	0.3 µs
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	-	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)

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