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BYD33KT/R

Description
DIODE 0.7 A, 800 V, SILICON, SIGNAL DIODE, HERMETICALLY SEALED, GLASS PACKAGE-2, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size72KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYD33KT/R Overview

DIODE 0.7 A, 800 V, SILICON, SIGNAL DIODE, HERMETICALLY SEALED, GLASS PACKAGE-2, Signal Diode

BYD33KT/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionHERMETIC SEALED, GLASS PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current20 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.7 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
GuidelineIEC-134
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.3 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D119
BYD33 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Jun 05
1996 Sep 18
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