Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB512
DESCRIPTION
・With
TO-220 package
・Low
collector saturation voltage
APPLICATIONS
・For
low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
固电
导½
半
CONDITIONS
Open emitter
Collector-base voltage
HA
INC
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector-emitter voltage
ES
NG
Open base
MIC
E
OR
UCT
ND
O
VALUE
-60
-60
-5
-3
UNIT
V
V
V
A
W
℃
℃
Open collector
Collector power dissipation
T
C
=25℃
25
150
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
I
C
=-10mA ,I
B
=0
I
C
=-1mA ,I
E
=0
I
E
=-1mA ,I
C
=0
I
C
=-2A; I
B
=-0.2A
I
C
=-2A; I
B
=-0.2A
V
CB
=-40V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-10V
60
3
MIN
-60
-60
-6
TYP.
2SB512
MAX
UNIT
V
V
V
-1.0
-1.5
-1.0
-1.0
V
V
μA
μA
电半
固
IN
DC current gain
导½
Transition frequency
ANG
CH
MIC
E SE
OR
UCT
ND
O
320
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB512
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
京公网安备 11010802033920号
EEWORLD
