JMnic
Product Specification
Silicon PNP Power Transistors
2SA1279
DESCRIPTION
・With
TO-220F package
・Low
collector saturation voltage
APPLICATIONS
・High
current switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-7
-5
-8
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1279
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ; I
B
=0
-60
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-3A;I
B
=-0.15A
-0.4
V
V
BEsat
Base-emitter saturation voltage
I
C
=-3A;I
B
=-0.15A
-1.2
V
μA
I
CBO
Collector cut-off current
V
CB
=-60V;I
E
=0
-1
I
EBO
Emitter cut-off current
V
EB
=-7V; I
C
=0
-1
μA
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-1V
70
240
h
FE-2
DC current gain
I
C
=-3A ; V
CE
=-1V
30
f
T
Transition frequency
I
C
=-1A ; V
CE
=-4V
60
MHz
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
200
pF
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1279
Fig.2 Outline dimensions
3