DC1572F datasheet, PDF - EEWORLD Datasheet

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DC1572F: DescriptionMixer Diode, Medium Barrier, S Band, 400ohm Z(V) Max, 6.5dB Noise Figure, Silicon; CategoryDiscrete semiconductor diode; File Size27KB，1 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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DC1572F Overview

Mixer Diode, Medium Barrier, S Band, 400ohm Z(V) Max, 6.5dB Noise Figure, Silicon

DC1572F Parametric

Parameter Name	Attribute value
Maker	Dynex
package instruction	O-CEMW-N2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	2 V
Configuration	SINGLE
Maximum diode capacitance	0.18 pF
Diode component materials	SILICON
Diode type	MIXER DIODE
Maximum forward voltage (VF)	0.2 V
frequency band	S BAND
maximum impedance	400 Ω
JESD-30 code	O-CEMW-N2
maximum noise index	6.5 dB
Number of components	1
Number of terminals	2
Maximum operating frequency	4 GHz
Minimum operating frequency	2 GHz
Maximum operating temperature	70 °C
Minimum operating temperature	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	MICROWAVE
Pulse input maximum power	0.15 W
Minimum pulse input power	0.3 W
Certification status	Not Qualified
surface mount	YES
technology	SCHOTTKY
Terminal form	NO LEAD
Terminal location	END
Schottky barrier type	MEDIUM BARRIER

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DC1572F Related Products

	DC1572F	DC1572E	DC1570G	DC1570F	DC1572G	DC1570E
Description	Mixer Diode, Medium Barrier, S Band, 400ohm Z(V) Max, 6.5dB Noise Figure, Silicon	Mixer Diode, Medium Barrier, S Band, 400ohm Z(V) Max, 7.5dB Noise Figure, Silicon	Mixer Diode, Medium Barrier, S Band, 400ohm Z(V) Max, 6.5dB Noise Figure, Silicon	Mixer Diode, Medium Barrier, S Band, 400ohm Z(V) Max, 7dB Noise Figure, Silicon	Mixer Diode, Medium Barrier, S Band, 400ohm Z(V) Max, 6dB Noise Figure, Silicon	Mixer Diode, Medium Barrier, S Band, 400ohm Z(V) Max, 7.5dB Noise Figure, Silicon
package instruction	O-CEMW-N2	O-CEMW-N2	O-CXMW-X2	O-CXMW-X2	O-CEMW-N2	O-CXMW-X2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	2 V	2 V	2 V	2 V	2 V	2 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum diode capacitance	0.18 pF	0.18 pF	0.18 pF	0.18 pF	0.18 pF	0.18 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE
Maximum forward voltage (VF)	0.2 V	0.2 V	0.2 V	0.2 V	0.2 V	0.2 V
frequency band	S BAND	S BAND	S BAND	S BAND	S BAND	S BAND
maximum impedance	400 Ω	400 Ω	400 Ω	400 Ω	400 Ω	400 Ω
JESD-30 code	O-CEMW-N2	O-CEMW-N2	O-CXMW-X2	O-CXMW-X2	O-CEMW-N2	O-CXMW-X2
maximum noise index	6.5 dB	7.5 dB	6.5 dB	7 dB	6 dB	7.5 dB
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating frequency	4 GHz	4 GHz	4 GHz	4 GHz	4 GHz	4 GHz
Minimum operating frequency	2 GHz	2 GHz	2 GHz	2 GHz	2 GHz	2 GHz
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE
Pulse input maximum power	0.15 W	0.15 W	0.15 W	0.15 W	0.15 W	0.15 W
Minimum pulse input power	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	NO	YES	NO
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal form	NO LEAD	NO LEAD	UNSPECIFIED	UNSPECIFIED	NO LEAD	UNSPECIFIED
Terminal location	END	END	UNSPECIFIED	UNSPECIFIED	END	UNSPECIFIED
Schottky barrier type	MEDIUM BARRIER	MEDIUM BARRIER	MEDIUM BARRIER	MEDIUM BARRIER	MEDIUM BARRIER	MEDIUM BARRIER
Base Number Matches	-	1	1	1	1	1

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