Mixer Diode, S Band, 350ohm Z(V) Max, 6dB Noise Figure, Silicon
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Dynex |
| package instruction | R-CDMW-N2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 2 V |
| Configuration | SINGLE |
| Maximum diode capacitance | 0.18 pF |
| Diode component materials | SILICON |
| Diode type | MIXER DIODE |
| Maximum forward voltage (VF) | 0.35 V |
| frequency band | S BAND |
| maximum impedance | 350 Ω |
| JESD-30 code | R-CDMW-N2 |
| JESD-609 code | e0 |
| maximum noise index | 6 dB |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating frequency | 4 GHz |
| Minimum operating frequency | 2 GHz |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | MICROWAVE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Pulse input maximum power | 0.3 W |
| Minimum pulse input power | 0.5 W |
| Certification status | Not Qualified |
| surface mount | YES |
| technology | SCHOTTKY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | NO LEAD |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
京公网安备 11010802033920号
EEWORLD
