LS3250B
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems Log Conformance Monolithic Dual NPN
The LS3250B is a monolithic pair of NPN transistors
mounted in a single SOIC package. The monolithic dual
chip design reduces parasitics and is ideal for use in
tracking applications.
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS3250B Features:
Tight matching
Low Output Capacitance
FEATURES
TIGHT MATCHING
THERMAL TRACKING
ABSOLUTE MAXIMUM RATINGS
1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Collector Current
Maximum Voltages
Collector to Collector Voltage
MIN
‐‐
‐‐
‐‐
‐‐
‐‐
TYP
‐‐
‐
‐‐
‐‐
‐‐
MAX
5
5
10
0.5
10
UNITS
mV
µV/°C
nA
nA/°C
%
≤ 5mV
≤ 5µV / °C
‐65°C to +150°C
‐55°C to +150°C
TBD
50mA
80V
CONDITIONS
I
C
= 10mA, V
CE
= 5V
I
C
= 10µA, V
CE
= 5V
T
A
= ‐40°C to +85°C
I
C
= 10µA, V
CE
= 5V
I
C
= 10µA, V
CE
= 5V
T
A
= ‐40°C to +85°C
I
C
= 10µA, V
CE
= 5V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
|V
BE1
– V
BE2
|
Base Emitter Voltage Differential
∆|(V
BE1
– V
BE2
)| / ∆T
Base Emitter Voltage Differential
Change with Temperature
|I
B1
– I
B2
|
Base Current Differential
|∆ (I
B1
– I
B2
)|/ ∆T
Base Current Differential
Change with Temperature
h
FE1
/h
FE2
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BV
CBO
Collector to Base Voltage
40
BV
CEO
Collector to Emitter Voltage
40
2
BV
EBO
Emitter‐Base Breakdown Voltage
6.2
BV
CCO
Collector to Collector Voltage
80
100
DC Current Gain
h
FE
80
80
V
CE
(SAT)
Collector Saturation Voltage
‐‐
I
EBO
Emitter Cutoff Current
‐‐
I
CBO
Collector Cutoff Current
‐‐
C
OBO
Output Capacitance
‐‐
I
C1C2
Collector to Collector Leakage Current
‐‐
f
T
Current Gain Bandwidth Product
‐‐
NF
Narrow Band Noise Figure
‐‐
Click To Buy
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
0.25
0.2
0.2
2
1
600
3
UNITS
V
V
V
V
V
nA
nA
pF
nA
MHz
dB
CONDITIONS
I
C
= 10mA, I
E
= 0
I
C
= 10µA, I
B
= 0
I
E
= 10µA, I
C
= 0
I
C
= 10µA, I
E
= 0
I
C
= 10µA, V
CE
= 5V
I
C
= 100µA, V
CE
= 5V
I
C
= 1mA, V
CE
= 5V
I
C
= 100mA, I
B
= 10mA
I
C
= 0A, V
CB
= 3V
I
E
= 0A, V
CB
= 20V
I
E
= 0A, V
CB
= 10V
V
CC
= ±80V
I
C
= 1mA, V
CE
= 5V
I
C
= 100µA, V
CE
= 5V, BW=200Hz, R
B
= 10Ω,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
SOIC (Top View)
Available Packages:
LS3250B in SOIC
LS3250B available as bare die
Please contact Micross for full package and die dimensions:
Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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