2N6520
2N6520
High Voltage Transistor
• Collector-Emitter Voltage: V
CEO
= -350V
• Collector Dissipation: P
C
(max)=625mW
• Complement to 2N6517
1
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Derate above 25
Junction Temperature
Storage Temperature
Parameter
1. Emitter 2. Base 3. Collector
Value
-350
-350
-5
-500
-250
0.625
5
50
-55 ~ 150
Units
V
V
V
mA
mA
W
mW/°C
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -250V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
V
CE
= -10V, I
C
= -100mA
V
CE
= -20V, I
C
= -10mA, f=20MHz
V
CB
= -20V, I
E
=0, f=1MHz
V
EB
= -0.5V, I
C
=0, f=1MHz
V
BE
(off)= -2V, V
CC
= -100V
I
C
= -50mA, I
B1
= -10mA
V
CC
= -100V, I
C
= -50mA
I
B1
=I
B2
= -10mA
40
20
30
30
20
15
Min.
-350
-350
-5
-50
-50
Max.
Units
V
V
V
nA
nA
200
200
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100
200
3.5
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
V
BE
(on)
f
T
C
ob
C
EB
t
ON
t
OFF
Base-Emitter On Voltage
* Current Gain Bandwidth Product
Output Capacitance
Emitter-Base Capacitance
Turn On Time
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
2N6520
Typical Characteristics
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
1000
-10000
V
CE
= -20V
I
C
= 10 I
B
V
CE
(sat)
h
FE
, DC CURRENT GAIN
100
-1000
V
BE
(sat)
10
-100
1
-1
-10
-100
-1000
-10000
-10
-1
-10
-100
-1000
-10000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
t
D
@ V
BE
(off)=-2.0V
V
CE
(off) = -100V
I
C
/I
B
= 5
o
T
J
=25 C
t
STG
1000
V
CE
(off) = -100V
t[ns] ,TIME
t[ns] ,TIME
t
R
100
t
F
I
C
/I
B
= 5
I
B1
= I
B2
T
J
=25 C
o
100
10
-1
-10
-100
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. Turn-On Time
Figure 4. Turn-Off Time
3.0
2.5
100
R[mV/ C], THERMAL COEFFICIENTS
I
C
/I
B
= 10
o
o
f=1MHz
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-1
-10
-100
C
ib
[pF], C
ob
[pF], CAPACITANCE
-55 C to 125 C
C
ib
R
θ
VB
for V
BE
-55 C to 25 C
o
o
10
C
ob
R
θ
VC
for V
CE
(sat)
-55 C to 125 C
o
o
o
1
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Temperature Coefficients
Figure 6. Capacitance
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
stm32/stm8
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