JMnic
Product Specification
Silicon PNP Power Transistors
2SB596
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD526
・Good
linearity of h
FE
APPLICATIONS
・Power
amplifier applications
・Recommend
for 20½25W high fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-5
-4
-4
-3
30
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-50mA; I
B
=0
I
E
=-10mA; I
C
=0
I
C
=-3 A;I
B
=-0.3 A
I
C
=-3A ; V
CE
=-5V
V
CB
=-80V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
I
E
=0; V
CB
=-10V;f=1MHz
40
15
3
130
MIN
-80
-5
TYP.
2SB596
MAX
UNIT
V
V
-1.7
-1.5
-30
-100
240
V
V
μA
μA
MHz
pF
h
FE-1
classifications
R
40-80
O
70-140
Y
120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB596
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB596
4
京公网安备 11010802033920号
EEWORLD
