JMnic
Product Specification
Silicon PNP Power Transistors
2SB676
DESCRIPTION
・With
TO-220C package
・High
DC Current Gain
:
h
FE
=2000 @V
CE
=-2V
,
I
C
=-1A (Min.)
・DARLINGTON
APPLICATIONS
・For
switching applications
・Hammer
drive, pulse motor drive applications
・Power
amplifier applications
PINNING
PIN
1
2
3
Base
Collector; connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-80
-5
-4
30
150
-55~150
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-10mA, I
B
=0
I
C
=-3A ,I
B
=-6mA
I
C
=-3A ,I
B
=-6mA
V
CB
=-100V, I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
2000
1000
MIN
-80
TYP.
2SB676
MAX
UNIT
V
-1.5
-2.0
-20
-2.5
V
V
μA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
V
CE
=-30V, I
B1
=-I
B2
=-6mA
R
L
=10Ω
0.15
0.80
0.40
μs
μs
μs
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB676
Fig.2 Outline dimensions
3
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