JMnic
Product Specification
Silicon PNP Power Transistors
2SB697 2SB697K
DESCRIPTION
・With
TO-3 package
・Complement
to type 2SD733/733K
・High
power dissipation
APPLICATIONS
・Power
amplifier applications
・Recommended
for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
固电
导½
半
SEM
GE
AN
2SB697
2SB697K
2SB697
2SB697K
V
CBO
V
CEO
CH
IN
Collector-base voltage
Open emitter
ND
ICO
CONDITIONS
OR
UCT
VALUE
-160
-180
-140
UNIT
V
Collector-emitter voltage
Open base
-160
Open collector
-6
-12
-20
T
C
=25℃
100
150
-40~150
V
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SB697 2SB697K
MIN
TYP.
MAX
UNIT
2SB697
V
(BR)CEO
Collector-emitter
breakdown voltage
2SB697K
I
C
=-50mA ;I
B
=0
-140
V
-160
2SB697
V
(BR)CBO
Collector-emitter
breakdown voltage
2SB697K
I
C
=-5mA ;I
E
=0
-160
V
-180
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-5mA ;I
C
=0
-6
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-6A; I
B
=-0.6A
-1.0
-2.5
V
V
BE
Base-emitter on voltage
I
CBO
固电
Collector cut-off current
导½
半
I
C
=-1A ; V
CE
=-5V
-1.5
V
V
CB
=-80V; I
E
=0
I
EBO
Emitter cut-off current
h
FE-1
DC current gain
h
FE-2
DC current gain
HAN
INC
SEM
GE
V
EB
=-4V; I
C
=0
ND
ICO
OR
UCT
-0.1
-0.1
320
mA
mA
I
C
=-1A ; V
CE
=-5V
40
I
C
=-5A ; V
CE
=-5V
20
f
T
Transition frequency
I
C
=-1A ; V
CE
=-5V
15
MHz
h
FE-1
Classifications
C
40-80
D
60-120
E
100-200
F
160-320
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB697 2SB697K
固电
导½
半
SEM
GE
HAN
INC
ND
ICO
OR
UCT
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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