JMnic
Product Specification
Silicon PNP Power Transistors
2SB762 2SB762A
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD857/857A
・Low
collector saturation voltage
APPLICATIONS
・For
audio frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
PARAMETER
2SB762
V
CBO
Collector-base voltage
2SB762A
2SB762
V
CEO
Collector-emitter voltage
2SB762A
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collectorl power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-80
-5
-4
-8
40
150
-55~150
V
A
A
W
℃
℃
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB762
I
C
=-30mA; I
B
=0
2SB762A
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
2SB762
2SB762A
2SB762
2SB762A
I
EBO
h
FE-1
h
FE-2
Emitter cut-off current
DC current gain
DC current gain
I
C
=-4A;I
B
=-0.4 A
I
C
=-3A ; V
CE
=-4V
V
CE
=-60V; V
BE
=0
CONDITIONS
2SB762 2SB762A
MIN
-60
TYP.
MAX
UNIT
V
CEO
Collector-emitter
breakdown voltage
V
-80
-1.5
-2.0
V
V
I
CES
Collector
cut-off current
-400
V
CE
=-80V; V
BE
=0
V
CE
=-30V; I
B
=0
-700
V
CE
=-60V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-3A ; V
CE
=-4V
40
15
-7
250
μA
I
CEO
Collector
cut-off current
μA
mA
Switching times
t
on
t
off
Turn-on time
I
C
=-4A ; I
B1
=-I
B2
=-0.4 A
Turn-off time
1.3
μs
0.3
μs
h
FE-1
classifications
R
40-90
Q
70-150
P
120-250
2
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