JMnic
Product Specification
Silicon PNP Power Transistors
2SB778
DESCRIPTION
・With
TO-3PML package
・Complement
to type 2SD998
APPLICATIONS
・High
power amplifier applications
・Recommended
for 45~50W audio
frequency amplifier output stage
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
MAX
-120
-120
-5
-10
-1.0
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-50mA ;I
B
=0
I
C
=-5A ;I
B
=-0.5A
I
C
=-5A;V
CE
=-5V
V
CB
=-120V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
E
=0;f=1MHz;V
CB
=-10V
55
10
280
MIN
-120
TYP.
2SB778
MAX
UNIT
V
-2.5
-1.5
-10
-10
160
V
V
μA
μA
MHz
pF
h
FE
Classifications
R
55-110
O
80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB778
Fig.2 outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB778
4
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