BLA6G1011-200R;
BLA6G1011L(S)-200RG
Power LDMOS transistor
Rev. 5 — 17 March 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to
1090 MHz.
Table 1.
Test information
Typical RF performance at T
case
= 25
C.
Test signal
f
(MHz)
pulsed RF
pulsed RF
1030 to 1090
1030 to 1090
V
DS
(V)
28
28
P
L
(W)
200
200
G
p
(dB)
20
20
D
(%)
65
65
t
r
(ns)
10
15
t
f
(ns)
6
6
Typical RF performance in a class-AB production test circuit for SOT502A
Typical RF performance in a Gullwing application for SOT502C and SOT502D
1.2 Features and benefits
Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply
voltage of 28 V and an I
Dq
of 100 mA:
Output power = 200 W
Power gain = 20 dB
Efficiency = 65 %
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
NXP Semiconductors
BLA6G1011(L)(S)-200R(G)
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLA6G1011-200R (SOT502A)
BLA6G1011L-200RG (SOT502D)
1
2
3
drain
gate
source
[1]
BLA6G1011LS-200RG (SOT502C)
1
2
3
drain
gate
source
[1]
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLA6G1011-200R
BLA6G1011L-200RG
-
-
flanged ceramic package; 2 mounting holes; 2 leads
eared flanged ceramic package; 2 mounting holes;
2 leads
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502D
SOT502C
Type number
BLA6G1011LS-200RG -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
BLA6G1011-200R_L-200RG_LS-200RG
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
49
+150
225
Unit
V
V
A
C
C
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 17 March 2015
2 of 13
NXP Semiconductors
BLA6G1011(L)(S)-200R(G)
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Z
th(j-c)
Thermal characteristics
Conditions
Type
BLA6G1011-200R
BLA6G1011L-200RG
Typ
Unit
transient thermal impedance T
case
= 25
C;
from junction to case
t
p
= 50
s;
=2%
0.085 K/W
0.065 K/W
Symbol Parameter
BLA6G1011LS-200RG 0.065 K/W
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.9 mA
V
DS
= 10 V; I
D
= 270 mA
V
DS
= 28 V;
I
D
= 1620 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9.45 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.45 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
1.4
1.7
-
40
-
11
Typ
-
2.0
2.2
-
48
-
18
Max
-
2.4
2.7
4.2
-
420
26
Unit
V
V
V
A
A
nA
S
0.012 0.07
-
3
0.093
-
pF
Table 7.
RF characteristics
Test signal: Pulsed RF; t
p
= 50
s;
= 2 %; V
DS
= 28 V; I
Dq
= 100 mA; T
case
= 25
C; unless
otherwise specified; in a class-AB production test circuit for straight leads.
Symbol
P
L
G
p
RL
in
D
t
r
t
f
Parameter
output power
power gain
input return loss
drain efficiency
rise time
fall time
P
L
= 200 W
P
L
= 200 W
P
L
= 200 W
P
L
= 200 W
P
L
= 200 W
Conditions
Min
200
18
-
58
-
-
Typ
-
20
10
65
10
6
Max
-
-
8
-
20
20
Unit
W
dB
dB
%
ns
ns
6.1 Ruggedness in class-AB operation
The BLA6G1011-200R, BLA6G1011L-200RG and BLA6G1011LS-200RG are enhanced
rugged devices and are capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: t
p
= 50
s;
= 2 %;
V
DS
= 28 V; I
Dq
= 100 mA; P
L
= 200 W; f = 1030 MHz to 1090 MHz.
BLA6G1011-200R_L-200RG_LS-200RG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 17 March 2015
3 of 13
NXP Semiconductors
BLA6G1011(L)(S)-200R(G)
Power LDMOS transistor
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Typical values unless otherwise specified.
f
(MHz)
BLA6G1011-200R
1030
1060
1090
1030
1060
1090
0.57
j0.94
0.70
j1.13
0.80
j1.53
0.69
j2.18
0.86
j2.36
1.12
j2.54
0.80
j0.68
0.84
j0.52
0.86
j0.35
0.84
j0.59
0.85
j0.73
0.86
j0.87
Z
S
()
Z
L
()
BLA6G1011L-200RG and BLA6G1011LS-200RG
Fig 1.
Definition of transistor impedance
BLA6G1011-200R_L-200RG_LS-200RG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 17 March 2015
4 of 13
NXP Semiconductors
BLA6G1011(L)(S)-200R(G)
Power LDMOS transistor
7.2 RF performance
V
DS
= 28 V; t
p
= 50
s;
= 2 %; I
Dq
= 100 mA.
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
V
DS
= 28 V; t
p
= 50
s;
= 2 %; I
Dq
= 100 mA.
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
Fig 2.
Output power as a function of input power;
typical values
Fig 3.
Power gain as a function of output power;
typical values
V
DS
= 28 V; t
p
= 50
s;
= 2 %; I
Dq
= 100 mA.
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
P
L
= 200 W; V
DS
= 28 V; t
p
= 50
s;
= 2 %;
I
Dq
= 100 mA.
Fig 4.
Drain efficiency as a function of output power;
typical values
Fig 5.
Power gain, input return loss and drain
efficiency as function of frequency;
typical values
BLA6G1011-200R_L-200RG_LS-200RG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 17 March 2015
5 of 13
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