JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-126 package
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
・Complement
to type 2SD985 2SD986
APPLICATIONS
・For
use in operating from IC without
predriver ,such as hammer driver
PINNING(See Fig.2)
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2SB794 2SB795
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SB794
V
CBO
Collector-base voltage
2SB795
2SB794
V
CEO
Collector-emitter voltage
2SB795
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-peak
T
a
=25℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55~150
℃
℃
Open collector
Open base
-80
-8
-1.5
-3.0
1.0
W
V
A
A
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB794
V
(BR)CEO
Collector-emitter
breakdown voltage
2SB795
V
CEsat
V
BEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SB794
I
CBO
Collector
cut-off current
2SB795
I
EBO
h
FE-1
h
FE-2
Emitter cut-off current
DC current gain
DC current gain
V
CB
=-80V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-2V
1000
2000
I
C
=-1A ;I
B
=-1mA
I
C
=-1A ;I
B
=-1mA
V
CB
=-60V; I
E
=0
I
C
=-10mA ;I
B
=0
-80
CONDITIONS
MIN
-60
2SB794 2SB795
TYP.
MAX
UNIT
V
-1.5
-2.0
V
V
-1.0
μA
-2.0
mA
30000
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-1.0A ; I
B1
=-I
B2
=-1.0mA
V
CC
=-50V;R
L
=50Ω
0.5
1.0
1.0
μs
μs
μs
h
FE-2
Classifications
M
2000-5000
L
4000-10000
K
8000-30000
2
京公网安备 11010802033920号
EEWORLD
