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2PG001

Description
Insulated Gate Bipolar Transistor, 30A I(C), 300V V(BR)CES, N-Channel, TO-220AB, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size292KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

2PG001 Overview

Insulated Gate Bipolar Transistor, 30A I(C), 300V V(BR)CES, N-Channel, TO-220AB, TO-220F, 3 PIN

2PG001 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionTO-220F, 3 PIN
Contacts3
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)30 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage30 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Bismuth/Copper (Sn/Ag/Bi/Cu)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)270 ns
Nominal on time (ton)487 ns
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG001
N-channel enhancement mode IGBT
For plasma display panel drive
For high speed switching circuits
Features
Low collector-emitter saturation voltage: V
CE(sat)
<
2.5 V
High speed hall time: t
f
= 250 nsec(typ.)
Package
Code
TO-220F-A1
Marking Symbol: 2PG001
Name
Pin
1. Gate
2. Collector
3. Emitter
Parameter
Symbol
V
CES
I
C
V
GES
I
CP
P
C
T
j
Collector-emitter voltage (E-B short)
Gate-emitter voltage (E-B short)
Collector current
Peak collector current
*
Power dissipation
T
a
= 25°C
Junction temperature
Storage temperature
Note) *: PW
10 us, Duty
≤ 1.0%
Electrical Characteristics
T
C
= 25°C±3°C
Parameter
Collector-emitter voltage (E-B short)
Collector-emitter cutoff current (E-B short)
Gate-emitter threshold voltage
sc
on
Gate-emitter cutoff current (E-B short)
Collector-emitter saturation voltage
Short-circuit output capacitance (Common emitter)
Gate charge load
na
nc
Short-circuit input capacitance (Common emitter)
Reverse transfer capacitance (Common emitter)
Gate-emitter charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate-collector charge
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
tin
ue
Pl
pla d in
ea
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wi co co nc an ing
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ico L d d e
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ro
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du
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ct
d
na t l
life
so ate
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nic st
cle
.co inf
sta
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ge
/e a
n/ tio
.
n.
Rating
300
30
40
±30
120
2.0
Unit
V
V
A
A
M
Di ain
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
C
= 25°C
W
G
Internal Connection
C
W
150
°C
°C
E
T
stg
–55 to +150
Symbol
V
CES
I
CES
I
GES
Conditions
Min
300
Typ
Max
50
Unit
V
mA
mA
V
V
I
C
= 1 mA, V
GE
= 0
V
CE
= 240 V, V
GE
= 0
V
GE
=
±30
V, V
CE
= 0
±1.0
5.5
2.5
V
GE(th)
C
ies
V
CE
= 10 V, I
C
= 1.0 mA
V
GE
= 15 V, I
C
= 30 A
3.0
e/
Di
V
CE(sat)
C
oes
C
res
Q
g
Q
ge
Q
gc
t
r
t
d(off)
t
f
2.0
86
14
25
5
10
580
pF
pF
pF
V
CE
= 25 V, V
GE
= 0, f = 1 MHz
ain
te
M
nC
nC
nC
ns
ns
ns
ns
V
CC
= 150 V, I
C
= 30 A, V
GE
= 15 V
t
d(on)
V
CC
= 150 V, I
C
= 30 A,
RL
5
Ω,
V
GE
= 15 V
87
400
120
150
Publication date : June 2007
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