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IXD75IF650NA

Description
Insulated Gate Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size212KB,7 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
Download Datasheet Parametric View All

IXD75IF650NA Overview

Insulated Gate Bipolar Transistor,

IXD75IF650NA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instruction,
Reach Compliance Codecompliant
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
IXD75IF650NA
tentative
XPT IGBT
V
CES
I
C25
=
=
650 V
75 A
1.5 V
V
CE(sat)
=
Trench IGBT (medium speed)
Copack
Part number
IXD75IF650NA
2 (C)
(G) 1
3 (E)
Features / Advantages:
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 2x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Pumps, Fans
Package:
SOT-227B (minibloc)
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131204
© 2013 IXYS all rights reserved
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