SILICON EPITAXIAL
NPN TRANSISTOR
BC109DCSM
•
•
•
Dual Silicon Planar NPN Transistors
Hermetic Ceramic Surface Mount Package
Designed For Low Noise General Purpose Amplifiers,
Driver Stages and Signal Processing Applications
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
ICM
PD
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
TC = 25°C
Derate Above 25°C
TJ
Tstg
Junction Temperature Range
Storage Temperature Range
Each Side
Total Device
30V
20V
5V
100mA
200mA
300mW
500mW
(1)
2mW/°C
3.3mW/°C
750mW
5mW/°C
-65 to +175°C
-65 to +175°C
THERMAL PROPERTIES
(Each Side)
Symbols
R
θJA
R
θJC
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
500
200
Units
°C/W
°C/W
Notes
(1) Total device power dissipation limited by package.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8124
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON EPITAXIAL
NPN TRANSISTOR
BC109DCSM
ELECTRICAL CHARACTERISTICS
(Each Side, TA = 25°C unless otherwise stated)
Symbols
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VBE
(2)
(2)
Parameters
Collector-Cut-Off Current
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Base-Emitter Voltage
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
Test Conditions
VCB = 20V
TA = 150°C
IC = 10µA
IC = 10mA
IE = 10µA
IC = 2mA
IC = 10mA
IC = 10mA
IC = 100mA
IC = 10mA
IC = 100mA
IC = 2mA
IC = 10µA
VCE = 5V
VCE = 5V
IB = 0.5mA
IB = 5mA
IB = 0.5mA
IB = 5mA
VCE = 5V
VCE = 5V
Min.
Typ
Max.
15
15
Units
nA
µA
30
20
5
550
700
700
250
600
750
900
200
40
800
mV
V
VCE(sat)
(2)
VBE(sat)
hFE
(2)
(2)
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 10mA
f = 100MHz
Small-Signal Current Gain
IC = 2mA
f = 1.0KHz
Output Capacitance
VCB = 10V
f = 1.0MHz
Input Capacitance
VEB = 0.5V
f = 1.0MHz
IC = 0
12
pF
IE = 0
6
pF
VCE = 5V
240
900
VCE = 5V
150
MHz
hfe
Cobo
Cibo
Notes
(2) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8124
Issue 1
Page 2 of 3
SILICON EPITAXIAL
NPN TRANSISTOR
BC109DCSM
MECHANICAL DATA
Dimensions in mm (inches)
2.29 ± 0.20
(0.09 ± 0.008)
1.65 ± 0.13
(0.065 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
0.64 ± 0.06
(0.025 ± 0.003)
2.54 ± 0.13
(0.10 ± 0.005)
2
1
A
3
4
5
6
0.23 rad.
(0.009)
A = 1.27 ± 0.13
(0.05 ± 0.005)
6.22 ± 0.13
(0.245 ± 0.005)
LCC2 (MO-041BB)
Underside View
Pad 1 – Collector 1
Pad 2 – Base 1
Pad 3 – Base 2
Pad 4 – Collector 2
Pad 5 – Emitter 2
Pad 6 – Emitter 1
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8124
Issue 1
Page 3 of 3
4.32 ± 0.13
(0.170 ± 0.005)
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