51
fax id: 5219
PRELIMINARY
CY7C09349
CY7C09359
4K/8K x 18
Synchronous Dual-Port Static RAM
Features
• True Dual-Ported memory cells which allow simulta-
neous access of the same memory location
• 2 Flow-Through/Pipelined devices
— 4K x 18 organization (CY7C09349)
— 8K x 18 organization (CY7C09359)
• 3 Modes
— Flow-Through
— Pipelined
— Burst
• Pipelined output mode on both ports allows fast
100-MHz cycle time
• 0.35-micron CMOS for optimum speed/power
v
• High-speed clock to data access 6.5/7.5/12 ns (max.)
• Low operating power
— Active= 200 mA (typical)
— Standby= 0.05 mA (typical)
• Fully synchronous interface for easier operation
• Burst counters increment addresses internally
— Shorten cycle times
— Minimize bus noise
•
•
•
•
•
— Supported in Flow-Through and Pipelined modes
Dual Chip enables for easy depth expansion
Upper and lower byte controls for bus matching
Automatic power-down
Commercial and Industrial temperature ranges
Available in 100-pin TQFP
Logic Block Diagram
R/W
L
UB
L
R/W
R
UB
R
CE
0L
CE
1L
LB
L
OE
L
1
0/1
1
0/1
0
0
CE
0R
CE
1R
LB
R
OE
R
FT/Pipe
L
9
0/1
1b 0b 1a 0a
b
a
0a 1a 0b 1b
a
b
0/1
FT/Pipe
R
9
I/O
9L
–I/O
17L
9
I/O
9R
–I/O
17R
I/O
Control
I/O
Control
9
I/O
0L
–I/O
8L
A
0L
–A
11/12L
CLK
L
ADS
L
CNTEN
L
CNTRST
L
[1]
I/O
0R
–I/O
8R
12/13
12/13
Counter/
Address
Register
Decode
True Dual-Ported
RAM Array
Counter/
Address
Register
Decode
A
0R
–A
11/12R
CLK
R
ADS
R
CNTEN
R
CNTRST
R
[1]
Note:
1. A
0
–A
11
for 4K; A
0
–A
12
for 8K devices.
For the most recent information, visit the Cypress web site at www.cypress.com
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134 •
408-943-2600
November 7, 1997 - Revised June 5, 1998
PRELIMINARY
Functional Description
The CY7C09349 and CY7C09359 are high speed synchro-
nous CMOS 4K and 8K x 18 dual-port static RAMs. Two ports
are provided, permitting independent, simultaneous access for
reads and writes to any location in memory.
[2]
Registers on
control, address, and data lines allow for minimal set-up and
hold times. In pipelined output mode, data is registered for
decreased cycle time. Clock to data valid t
CD2
= 6.5 ns (pipe-
lined). Flow-through mode can also be used to bypass the
pipelined output register to eliminate access latency. In
flow-through mode data will be available t
CD1
= 15 ns after the
address is clocked into the device. Pipelined output or
flow-through mode is selected via the FT/Pipe pin.
Each port contains a burst counter on the input address regis-
ter. The internal write pulse width is independent of the LOW-
to-HIGH transition of the clock signal. The internal write pulse
is self-timed to allow the shortest possible cycle times.
CY7C09349
CY7C09359
A HIGH on CE
0
or LOW on CE
1
for one clock cycle will power
down the internal circuitry to reduce the static power consump-
tion. The use of multiple Chip Enables allows easier banking
of multiple chips for depth expansion configurations. In the
pipelined mode, one cycle is required with CE
0
LOW and CE
1
HIGH to reactivate the outputs.
Counter enable inputs are provided to stall the operation of the
address input and utilize the internal address generated by the
internal counter for fast interleaved memory applications. A
port’s burst counter is loaded with the port’s address strobe
(ADS). When the port’s count enable (CNTEN) is asserted, the
address counter will increment on each LOW-to-HIGH transi-
tion of that port’s clock signal. This will read/write one word
from/into each successive address location until CNTEN is
deasserted. The counter can address the entire memory array
and will loop back to the start. Counter reset (CNTRST) is used
to reset the burst counter.
All parts are available in 100-pin Thin Quad Plastic Flatpack
(TQFP) packages.
Note:
2. When simultaneously writing to the same location, final value cannot be determined.
2
PRELIMINARY
Pin Configurations
100-Pin TQFP (Top View)
CNTENR
CNTENL
ADSR
CLKR
ADSL
CLKL
CY7C09349
CY7C09359
GND
GND
A0R
A1R
A2R
A3R
A4R
A5R
A6R
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
A9L
A10L
A11L
[Note 3] A12L
NC
NC
NC
LBL
UBL
CE0L
CE1L
CNTRSTL
R/WL
OEL
VCC
FT/PIPEL
I/O17L
I/O16L
GND
I/O15L
I/O14L
I/O13L
1/012L
I/O11L
I/O10L
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
75
74
73
72
71
70
69
68
67
66
A8R
A9R
A10R
A11R
A12R [Note 3]
NC
NC
NC
LBR
UBR
CE0R
CE1R
CNTRSTR
R/WR
GND
OER
FT/PIPER
I/O17R
GND
I/O16R
I/O15R
I/O14R
I/O13R
I/O12R
I/O11R
CY7C09359 (8K x 18)
CY7C09349 (4K x 18)
A7R
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
I/10R
A8L
A7L
A6L
A5L
A4L
A3L
A2L
A1L
I/O3L
I/O9L
I/O8L
I/O7L
I/O6L
I/O5L
I/O4L
I/O2L
A0L
I/O1L
I/O0L
I/O0R
I/O3R
I/O5R
I/O7R
I/O8R
Selection Guide
CY7C09349
CY7C09359
-6
f
MAX2
(MHz) (Pipelined)
Max Access Time (ns) (Clock to Data, Pipelined)
Typical Operating Current I
CC
(mA)
Typical Standby Current for I
SB1
(mA)
(Both Ports TTL Level)
Typical Standby Current for I
SB3
(mA)
(Both Ports CMOS Level)
Note:
3. This pin is NC for CY7C09349.
CY7C09349
CY7C09359
-7
83
7.5
235
40
0.05
I/O9R
I/O2R
I/O4R
I/O6R
VCC
GND
GND
I/01R
VCC
CY7C09349
CY7C09359
-12
50
12
195
30
0.05
100
6.5
250
45
0.05
3
PRELIMINARY
Pin Definitions
Left Port
A
0L
–A
12L
ADS
L
Right Port
A
0R
–A
12R
ADS
R
Description
Address Inputs.(A
0
–A
11
for 4K, A
0
–A
12
for 8K devices)
CY7C09349
CY7C09359
Address Strobe Input. Used as an address qualifier. This signal should be asserted LOW during
normal read or write transactions. Asserting this signal LOW also loads the burst address
counter with data present on the I/O pins.
Chip Enable Input. To select either the left or right port, both CE
0
AND CE
1
must be asserted
to their active states (CE
0
≤
V
IL
and CE
1
≥
V
IH
).
Clock Signal. This input can be free running or strobed. Maximum clock input rate is f
MAX
Counter Enable Input. Asserting this signal LOW increments the burst address counter of its
respective port on each rising edge of CLK. CNTEN is disabled if ADS or CNTRST are asserted
LOW.
Counter Reset Input. Asserting this signal LOW resets the burst address counter of its respec-
tive port to zero. CNTRST is not disabled by asserting ADS or CNTEN.
Data Bus Input/Output. (I/O
0
–I/O
15
for x16 devices)
Lower Byte Select Input. Asserting this signal LOW enables read and write operations to the
lower byte (I/O
0
–I/O
8
for x18, I/O
0
–I/O
7
for x16) of the memory array. For read operations both
the LB and OE signals must be asserted to drive output data on the lower byte of the data pins.
Upper Byte Select Input. Same function as LB, but to the upper byte (I/O
8/9L
–I/O
15/17L
)
Output Enable Input. This signal must be asserted LOW to enable the I/O data pins during read
operations.
Read/Write Enable Input. This signal is asserted LOW to write to the dual port memory array.
For read operations, assert this pin HIGH.
Flow-Through/Pipelined Select Input. For flow-through mode operation, assert this pin LOW.
For pipelined mode operation, assert this pin HIGH.
Ground Input.
No Connect.
Power Input.
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage ........................................... >2001V
Latch-Up Current..................................................... >200 mA
CE
0L
,CE
1L
CLK
L
CNTEN
L
CE
0R
,CE
1R
CLK
R
CNTEN
R
CNTRST
L
I/O
0L
–I/O
17L
LB
L
CNTRST
R
I/O
0R
–I/O
17R
LB
R
UB
L
OE
L
R/W
L
FT/PIPE
L
GND
NC
V
CC
UB
R
OE
R
R/W
R
FT/PIPE
R
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°
C to +150
°
C
Ambient Temperature with Power Applied ..–55
°
C to +125
°
C
Supply Voltage to Ground Potential ............... –0.3V to +7.0V
DC Voltage Applied to
Outputs in High Z State ................................. –0.5V to +7.0V
DC Input Voltage............................................ –0.5V to +7.0V
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
5V
±
10%
5V
±
10%
4
PRELIMINARY
Electrical Characteristics
Over the Operating Range
CY7C09349
CY7C09359
-6
Symbol
V
OH
V
OL
V
IH
V
IL
I
OZ
I
CC
Parameter
Output HIGH Voltage (V
CC
=Min,
I
OH
=–4.0 mA)
Output LOW Voltage (V
CC
=Min,
I
OH
= +4.0 mA)
Input HIGH Voltage
Input LOW Voltage
Output Leakage Current
Operating Current
(V
CC
=Max, I
OUT
=0 mA)
Outputs Disabled
Standby Current (Both
Ports TTL Level)
[4]
CE
L
&
CE
R
≥
V
IH
, f=f
MAX
Standby Current (One Port
TTL Level)
[4]
CE
L
| CE
R
≥
V
IH
, f=f
MAX
Standby Current (Both
Ports CMOS Level)
[4]
CE
L
& CE
R
≥
V
CC
– 0.2V, f=0
Standby Current (One Port
CMOS Level)
[4]
CE
L
| CE
R
≥
V
IH
, f=f
MAX
Com’l.
Indust.
Com’l.
Indust.
Com’l.
Indust.
Com’l.
Indust.
Com’l.
Indust.
160
200
0.05
0.25
175
235
45
115
–10
250
2.2
0.8
10
450
–10
235
260
40
55
160
175
0.05
0.05
145
160
Min
2.4
0.4
2.2
0.8
10
420
445
105
120
220
235
0.25
0.25
185
200
–10
Typ
Max
Min
2.4
0.4
2.2
-7
Typ
Max
Min
2.4
CY7C09349
CY7C09359
-12
Typ
Max
Units
V
0.4
V
V
0.8
10
195
225
30
45
125
140
0.05
0.05
110
125
300
375
85
100
190
205
0.25
0.25
150
165
V
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
SB1
I
SB2
I
SB3
I
SB4
Capacitance
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Max.
10
10
Unit
pF
pF
AC Test Loads
5V
5V
R1 = 893Ω
OUTPUT
C = 30 pF
R2 = 347Ω
V
TH
= 1.4V
OUTPUT
C = 30 pF
R
TH
= 250Ω
R1 = 893Ω
OUTPUT
C = 5 pF
R2 = 347Ω
(a) Normal Load (Load 1)
(b) Thévenin Equivalent (Load 1)
ALL INPUT PULSES
3.0V
GND
10%
≤
3 ns
90%
90%
10%
≤
3 ns
(c) Three-State Delay (Load 2)
(Used for t
CKLZ
, t
OLZ
, & t
OHZ
including scope and jig)
Note:
4. CE
L
and CE
R
are internal signals. To select either the left or right port, both CE
0
AND CE
1
must be asserted to their active states (CE
0
≤
V
IL
and CE
1
≥
V
IH
)
.
5
RF/Wirelessly
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