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RL103G

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size213KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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RL103G Overview

1 A, 200 V, SILICON, SIGNAL DIODE

RL101G-RL107G
Plastic Silicon Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
Features
Low cost
Diffused junction
Glass passivated chip junction
High forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,lsopropanol
and similar solvents
The plastic material carries U/L recognition 94V-O
A - 405
Mechanical Data
Case:JEDEC A - 405,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method208
Polarity: Color band denotes cathode end
Weight: 0.008 ounces,0.23 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RL
101G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maxximum
average forw
ard
rectified current
9.5mm
lead length,
@T =75
A
RL
102G
100
70
100
RL
103G
200
140
200
RL
104G
400
280
400
1.0
RL
105G
600
420
600
RL
106G
800
560
800
RL
107G
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @T
A
=125
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
I
FSM
30.0
A
V
F
I
R
C
J
R
JA
1.0
5.0
50.0
15
50
-55----+150
-55----+150
V
µA
pF
/W
Operating junction temperature range
Storage temperature range
T
J
T
STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
http://www.luguang.cn
mail:lge@luguang.cn

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