Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
PBYR1645F, PBYR1645X
SYMBOL
QUICK REFERENCE DATA
V
R
= 40 V/ 45 V
k
1
a
2
I
F(AV)
= 16 A
V
F
≤
0.6 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers
in low voltage, high frequency switched mode power supplies.
The PBYR1645F is supplied in the SOD100 package.
The PBYR1645X is supplied in the SOD113 package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
isolated
SOD100
case
SOD113
case
1
2
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
PBYR16
PBYR16
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
-
-
T
hs
≤
97 ˚C
square wave;
δ
= 0.5; T
hs
≤
95 ˚C
square wave;
δ
= 0.5; T
hs
≤
95 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
40F
40X
40
40
40
16
32
120
132
1
150
175
MAX.
45F
45X
45
45
45
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
isol
Peak isolation voltage from
both terminals to external
heatsink
CONDITIONS
PBYR1645F, PBYR1645X
MIN.
-
TYP. MAX. UNIT
-
1500
V
SOD100 package; R.H.
≤
65%; clean and
dustfree
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
both terminals to external
sinusoidal waveform; R.H.
≤
65%; clean
heatsink
and dustfree
Capacitance from pin 1 to
external heatsink
f = 1 MHz
-
-
2500
V
C
isol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-hs
R
th j-a
Thermal resistance junction
to heatsink
Thermal resistance junction
to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
TYP. MAX. UNIT
-
55
4.2
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
C
d
Forward voltage
Reverse current
Junction capacitance
CONDITIONS
I
F
= 16 A; T
j
= 125˚C
I
F
= 16 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
TYP. MAX. UNIT
0.53
0.55
0.2
27
470
0.6
0.68
1.7
40
-
V
V
mA
mA
pF
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645F, PBYR1645X
20
Forward dissipation, PF (W)
Vo = 0.37 V
Rs = 0.014 Ohms
PBYR1645X
Ths(max) (C)
66
D = 1.0
100
Reverse current, IR (mA)
125 C
PBYR1645
15
0.5
10
0.2
0.1
I
t
p
D=
t
p
T
t
87
10
100 C
75 C
108
1
50 C
5
T
129
0.1
Tj = 25 C
0
0
5
10
15
20
Average forward current, IF(AV) (A)
150
25
0.01
0
25
Reverse voltage, VR (V)
50
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.4. Typical reverse leakage current; I
R
= f(V
R
);
parameter T
j
15
Forward dissipation, PF (W)
Vo = 0.37 V
Rs = 0.014 Ohms
PBYR1645X
Ths(max) (C)
a = 1.57
87
Cd / pF
10000
PBYR1645
2.8
10
4
2.2
1.9
108
1000
5
129
0
0
5
10
Average forward current, IF(AV) (A)
150
15
100
1
10
VR / V
100
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
40
PBYR1645
Fig.5. Typical junction capacitance; C
d
= f(V
R
);
f = 1 MHz; T
j
= 25˚C to 125 ˚C.
50
10
Transient thermal impedance, Zth j-hs (K/W)
1
30
typ
max
10
T
20
0.1
P
D
t
p
D=
t
p
T
t
0
0.01
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
1.4
1us
10us
100us
1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYR1645
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance; Z
th j-hs
= f(t
p
).
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
PBYR1645F, PBYR1645X
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
k
0.4
M
a
0.9
0.7
0.55 max
1.3
5.08
top view
Fig.7. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3.2
3.0
10.3
max
PBYR1645F, PBYR1645X
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
1.0 (2x)
0.6
2.54
5.08
0.5
2.5
0.9
0.7
Fig.8. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5
Rev 1.200
stm32/stm8
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