DMP2066UFDE
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
36mΩ @ V
GS
= -4.5V
-20V
56mΩ @ V
GS
= -2.5V
75mΩ @ V
GS
= -1.8V
U-DFN2020-6
Type E
Package
I
D
T
A
= +25°C
-6.2A
-5.0A
-4.2A
Features
•
•
•
•
•
•
•
0.6mm profile – ideal for low profile applications
2
PCB footprint of 4mm
Low Gate Threshold Voltage
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
•
•
•
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.0065 grams (approximate)
Applications
•
•
•
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
U-DFN2020-6
Type E
6 D
D 1
D 2
S
G 3
Pin1
5 D
4 S
Bottom View
Bottom View
Internal Schematic
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP2066UFDE-7
Notes:
Case
U-DFN2020-6 Type E
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
PC
PC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Dot Denotes Pin 1
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
YM
2013
A
May
5
2014
B
Jun
6
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
1 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMP2066UFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<5s
Steady
State
t<5s
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
Value
-20
±12
-6.2
-4.9
-7.5
-5.9
-4.2
-3.4
-5.2
-4.1
-25
2.5
Units
V
V
A
A
A
A
A
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Continuous Drain Current (Note 5) V
GS
= -1.8V
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady state
t<5s
Steady state
t<5s
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
R
θ
Jc
T
J,
T
STG
Value
0.66
189
123
2.03
61
40
9.3
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-20
⎯
⎯
-0.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
25
33
50
9
-0.7
1537
146
127
10.4
14.4
2.6
2.7
13.7
14.0
79.1
35.5
Max
⎯
-1
±100
-1.1
36
56
75
⎯
-1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
=
±12.0V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -4.6A
V
GS
= -2.5V, I
D
= -3.8A
V
GS
= -1.8V, I
D
= -2.0A
V
DS
= -10V, I
D
= -4.5A
V
GS
= 0V, I
S
= -2.1A
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -10V, V
GS
= -4.5V
I
D
= -4.5A
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
ns
V
DD
= -10V, V
GS
= -4.5V, R
G
= 6Ω,
R
L
= 10Ω, I
D
= -1A
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMP2066UFDE
20
20
I
D
, DRAIN CURRENT (A)
10
I
D
, DRAIN CURRENT (A)
0.5
1.5 2 2.5 3 3.5
4 4.5
V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
1
5
15
15
10
5
5
0
0
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
T
A
=150°C
T
A
=85°C
T
A
=125°C
3
0.08
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
0.05
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
V
GS
= 10V
0.04
0.06
V
GS
= 1.8V
V
GS
= 2.5V
0.03
0.04
0.02
T
A
=25°C
T
A
=-55°C
0.02
V
GS
= 4.5V
0.01
0
0
5
10
15
I
D
, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
0
0
5
10
15
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.7
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Normalized)
0.06
1.5
0.05
1.3
0.04
1.1
0.03
0.9
0.02
0.7
0.01
0.5
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 6 On-Resistance Variation with Temperature
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
3 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMP2066UFDE
1.2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
20
1
I
S
, SOURCE CURRENT (A)
16
0.8
12
T
A
= 25
°
C
0.6
I
D
= -250µA
I
D
= 1mA
8
0.4
0.2
4
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100000
T
A
= 150
°
C
0
-50
0
0.2
0.4
0.6
0.8
1
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
10000
f = 1MHz
10000
C
T
, JUNCTION CAPACITANCE (pF)
I
DSS
, LEAKAGE CURRENT (nA)
C
ISS
1000
1000
100
T
A
= 85
°
C
10
T
A
= 25
°
C
C
OSS
C
RSS
1
100
0
5
10
15
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
5
0
-4
-8
-12
-16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
-20
100
R
DS(on)
Limited
P
W
= 100µs
V
GS
, GATE SOURCE VOLTAGE (V)
4
3
-I
D
, DRAIN CURRENT (A)
10
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
2
0.1
T
J(max)
= 150°C
1
0
0
T
A
= 25°C
V
GS
= -12V
Single Pulse
0.01
DUT on 1 * MRP Board
2
4
6
8
10 12 14
16
Q
G
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Charge Characteristics
18
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
4 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMP2066UFDE
1
r(t), TRANSIENT THERMAL RESISTANCE
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
A3
A
A1
D
b1
D2
E E2
L1
K1
L(2X)
K2
Z(4X)
e
b(6X)
U-DFN2020-6
Type E
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0
0.05
0.03
A3
0.15
−
−
b
0.25
0.35
0.30
b1
0.185 0.285 0.235
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
E
1.95
2.05
2.00
E2
1.40
1.60
1.50
e
0.65
−
−
L
0.25
0.35
0.30
L1
0.82
0.92
0.87
K1
0.305
−
−
K2
0.225
−
−
Z
0.20
−
−
All Dimensions in mm
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
5 of 6
www.diodes.com
July 2012
© Diodes Incorporated
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