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BZV55C9.1BSB-W

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size57KB,6 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
Download Datasheet Parametric View All

BZV55C9.1BSB-W Overview

Zener Diode,

BZV55C9.1BSB-W Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRectron Semiconductor
Reach Compliance Codecompliant
Diode typeZENER DIODE
JESD-609 codee3
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceMATTE TIN OVER NICKEL
Maximum time at peak reflow temperatureNOT SPECIFIED
BZV55C-BS
SERIES
4.7V to 36V
SILICON PLANAR ZENER DIODE
FEATURES
* Zener Voltage Range 4.7 to 36 Volts
* LL-34 (Mini-MELF) Package
* Hermetically Sealed, Glass Silicon Diodes
SOD-80C
.059(1.50)
.056(1.42)
.112(0.30)
R.004(0.10)
.112(0.30)
.057(1.45)
.053(1.35)
.146(3.70)
.130(3.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25
o
C unless otherwise noted )
RATINGS
Average Forward Current (averaged Over any 20 ms period)
Repetitive Peak Forward Current
Total Power Dissipation up to T
flange
=50
O
C
Up to Ta=50
O
C and Mounted on a Ceramic Substrate of 10mm x 10
Ptot
mm x 0.6mm
Non-Reperitive Peak Reverse Power Dissipation t=100us,T
J
=150 C
Storage Temperature
Junction Temperature
THERMAL RESISTANCE
From Junction to tie-point(flanges)
Form Junction to Ambient when Mounted on a Ceramic Substrate of
Rth(j-a)
10mm x 10mm x 0.6mm
VD 2007-11
0.38
K/mW
Rth(j-tp)
0.30
K/mW
O
SYMBOL
IF(av)
IFRM
Ptot
VALUE
250
250
500
UNITS
mA
mA
mW
400
mW
P
ZSM
Tstg
T
J
30
-65 to +200
200
W
O
C
C
O
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