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2N6426D75Z

Description
Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size48KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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2N6426D75Z Overview

Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

2N6426D75Z Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1.2 A
Collector-emitter maximum voltage40 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)20000
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Base Number Matches1

2N6426D75Z Related Products

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Description Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknow compli compli unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A
Collector-emitter maximum voltage 40 V 40 V 40 V 40 V 40 V 40 V
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 20000 20000 20000 20000 20000 20000
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 - -
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