EEWORLDEEWORLDEEWORLD

Part Number

Search

2SK1864TE24R

Description
TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size104KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SK1864TE24R Overview

TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

2SK1864TE24R Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknow
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.85 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment100 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2SK1864TE24R Related Products

2SK1864TE24R 2SK1865TE24R 2SK1865TE24L 2SK2230TP 2SK2235TE16L 2SK2235TE16R 2SK1864TE24L
Description TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V 500 V 250 V 250 V 250 V 500 V
Maximum drain current (ID) 8 A 12 A 12 A 2 A 2 A 2 A 8 A
Maximum drain-source on-resistance 0.85 Ω 0.7 Ω 0.7 Ω 2 Ω 2 Ω 2 Ω 0.85 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1 1 1 1
Number of terminals 2 2 2 3 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES NO YES YES YES
Terminal form GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1
Shell connection DRAIN DRAIN DRAIN - DRAIN DRAIN DRAIN
Maximum power consumption environment 100 W 100 W 100 W - 20 W 20 W 100 W

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1521  416  2339  2805  170  31  9  48  57  4 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号