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8S512-35/BXCJC

Description
MEMORY MODULE,SRAM,512KX8,HYBRID,DIP,32PIN,CERAMIC
Categorystorage    storage   
File Size434KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

8S512-35/BXCJC Overview

MEMORY MODULE,SRAM,512KX8,HYBRID,DIP,32PIN,CERAMIC

8S512-35/BXCJC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instructionDIP, DIP32,.6
Reach Compliance Codeunknown
Maximum access time35 ns
I/O typeCOMMON
JESD-30 codeR-XDIP-T32
JESD-609 codee0
memory density4194304 bit
Memory IC TypeSRAM MODULE
memory width8
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.06 A
Minimum standby current4.5 V
Maximum slew rate0.15 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyHYBRID
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
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