New Products, Tips and Tools for Power and Mobile Applications
BENCHMarks
VOL. 3, 2012
™
Advantages
• Greater noise immunity:
negative voltage swing (VS)
down to –9.8V at 15V
BS
• Current driving capability
of 4.5A/4.5A sourcing/sinking
• Qualified to AEC-Q100
Automotive Class 1
Greater Noise Immunity, Less Power
Dissipation for Automotive Applications
The FAN7171 (high-current, high-side gate driver IC) and FAN7190 (high-current,
high- and low-side gate driver IC) deliver increased efficiency, higher drive current
and greater noise immunity. These devices are optimized for electric and hybrid
electric DC-DC power conversion, high-voltage auxiliaries, diesel and gasoline
fuel injection, and other high-power MOSFET and IGBT driver applications. The
FAN7171 can drive high-speed, high-side MOSFETs and IGBTs that operate
up to +600V, while the FAN7190 can independently drive high- and low-side
MOSFETs and IGBTs that also operate up to +600V. Both devices are highly
integrated and provide increased functionality, resulting in reduced component
count, bill of material costs and board space.
Applications
• Body electronics
• Powertrain
For more information, please visit:
fairchildsemi.com/pf/FA/FAN7171_F085.html
fairchildsemi.com/pf/FA/FAN7190_F085.html
High-Current, High-Voltage Gate Drivers:
FAN7171, High-Side and FAN7190 High- & Low-Side
Product
Number
FAN7171_F085
FAN7190_F085
Floating
Offset
Voltage
(Max) (V)
600
600
Recharge
Supply
Voltage
(Min)
(V)
10
10
Supply
Voltage
(Max)
(V)
20
22
t
ON
/
t
OFF
Typ
(nS)
150/
150
140/
140
t
r
/t
f
Typ
(nS)
25/
15
25/
20
Pulsed
Output
Current
(mA)
4000/
4000
4500/
4500
Package
Bootstrap
Bootstrap
SO-8
SO-8
AuTOMOTiVe SOluTiONS
Reliable, Integrated Smart High-Side Switches
Offer Space-Savings
Reliably and safely switching high currents into grounded resistive or inductive
loads is a necessity for designers of automotive applications. Fairchild has
developed a smart high-side switch family that specifically addresses advanced
electrical load—without relying on discrete MOSFET solutions. By integrating
protection and diagnostic features, you benefit from reduced component count
and PCB complexity, as well as better system reliability.
The family includes the FDDS100H06_F085 smart high-side switch, an
N-channel power MOSFET with charge pump, ground-referenced CMOS-
compatible input and diagnostic output with integrated protection functions.
The family also offers the FDBS09H04A_F085A and FDDS10H04A_F085A
smart high-side switches, incorporating an N-channel power MOSFET device
featuring a charge pump, current controlled input and diagnostic feedback with
load current sense and integrated Smart Trench chip-on-chip technology.
Advantages
• Short circuit protection
• Current limitation
• Thermal shutdown with restart
• Overvoltage protection
(including load dump)
• Very low standby current
• Fast demagnetization of
inductive loads
• Open load detection in
ON-state
• CMOS compatible input
• ESD protection
• Optimized static
electromagnetic compatibility
• Open drain fault output
• Qualified to AEC-Q100
Applications
• Body electronics
• Infotainment
• Portable navigation
• Powertrain
• Safety and control
• Vehicle security systems
Product Number
FDBS09H04A_F085A
R
DS(ON)
mΩ
9
10
100
i
lOAD
(A)
48
41
3
Supply Voltage (V)
5.5 to 38
5.5 to 38
5.5 to 37
Package
TO263_7l
TO252_5l
TO252_5l
Automotive Body, Lighting and Powertrain Applications
For more information, please visit:
fairchildsemi.com/pf/FD/FDBS09H04A_F085.html
fairchildsemi.com/pf/FD/FDDS10H04A.html
fairchildsemi.com/pf/FD/FDDS100H06_F085.html
FDDS10H04A_F085A
FDDS100H06_F085
30V Power33 MOSFeTs
Reduce Board Space with
Best-in-Class Power Density
Power efficiency standards and end-system requirements are forcing design-
ers to seek energy-efficient solutions that help shrink their applications’ power
supply form factor. Fairchild’s FDMC8010 30V Power33 MOSFET meets these
needs while improving power density—in a 3.3mm x 3.3mm PQFN form factor
that has a 66% footprint area savings.
Using Fairchild’s PowerTrench
®
technology, the FDMC8010 is well-suited for
applications where the lowest R
DS(ON)
is required in small spaces. In isolated
1/16th brick DC-DC converter applications, the Power33 MOSFET’s R
DS(ON)
of
only 1.3mΩ max, is 25% smaller than the competitive solution in this footprint.
Additionally, the device reduces conduction losses, thereby improving thermal
efficiency by up to 25%.
Advantages
• High performance technology
for best-in-class R
DS(ON)
of
1.3mΩ max
• 3.3mm x 3.3mm industry-
standard form factor,
PQFN – saves board space
• Lower power conduction loss
• Higher power density
• Higher efficiency
Applications
• Isolated DC-DC
synchronous rectification
• Point-of-load
synchronous buck conversion
• High efficiency load
switch and low-side switching
• O-ring FET
For more information, please visit:
fairchildsemi.com/pf/FD/FDMC8010.html
Shrink Your Design While Delivering Best-in-Class Power Density
Product
Number
FDMC8010
BV
DSS
(V)
25
i
D
(A)
T
A
= 25°C
30
R
DS(ON)
Max
10V
1.3mΩ
4.5V
1.8mΩ
Q
g
(nC)
0V to
4.5V
45
Q
gd
(nC)
9.5
pF
C
iSS
4405
Package
PQFN
3.3mm x 3.3mm
(Power33)
DuAl N-CHANNel PowerTrench
®
MOSFeT
Achieve Highest Power Density, Efficiency in
Power Supply Designs
The challenge of providing higher power density and efficiency in less board
space goes hand-in-hand with the increasing requirements to provide added
functionality in high-density embedded DC-DC power supplies. A solution to
this dilemma, Fairchild’s FDPC8011S, has been developed to operate at higher
switching frequencies, and includes two specialized N-channel MOSFETs in a
dual package. The switch node has been internally connected to enable easy
placement and routing of synchronous buck converters. The control MOSFET
(Q1) and synchronous SyncFET
™
(Q2) have been designed to provide optimal
power efficiency.
The FDPC8011S consists of a 1.4mΩ SyncFET technology and a 5.4mΩ control,
low figure of merit N-channel MOSFET integrated in an all-clip package, which
helps reduce the capacitor count and inductor size. The device’s source down,
low-side allows for simple placement and routing, enabling a more compact
board layout and achieving optimal thermal performance.
Advantages
• Control N-channel MOSFET
with R
DS(ON)
= 5.4mΩ typical,
(7.3mΩ max) at V
GS
= 4.5V
• Synchronous N-channel
MOSFET with R
DS(ON)
= 1.4mΩ
typical, (2.1mΩ max) at
V
GS
= 4.5V
• Low inductance packaging
shortens rise/fall times,
resulting in lower switching
losses
• MOSFET integration enables
optimum layout for lower
circuit inductance and reduced
switch node ringing
Applications
• Computing
• Communications
• General purpose point-of-load
For more information, please visit:
fairchildsemi.com/pf/FD/FDPC8011S.html
Power Clip Dual N-Channel PowerTrench
®
MOSFET
Product
Number
Schottky
Body
Diode
Yes
BV
DSS
(V)
R
DS(ON)
Max
(mΩ)
@ 4.5V V
GS
High-
Side
7.3
low-
Side
1.4
Q
g
Typ (nC) @
V
GS
= 4.5V
High-
Side
9
low-
Side
30
C
OSS
Typ
(pF) High-Side
low-
Side
332
High-
Side
1126
Dimension
(mm)
FDPC8011S
25
3.3 x 3.3
GeNeRATiON iii XS
™
DrMOS FAMilY
Highest Power Efficiency with the DrMOS Family
Achieve improved efficiency with >1MHz switching frequencies, increased maxi-
mum load current and greater power density with Fairchild’s Generation III XS
™
DrMOS multi-chip mode module family. The FDMF68xx family achieves effi-
ciency standards targets, while providing up to 60A per phase in a 6mm x 6mm
PQFN package. Both 3.3V and 5V Tri-State PWM input voltages for digital and
analog PWM controllers, and a 30V device option make the DrMOS family a
good choice for use in UltraBook
™
systems.
Designed to enable a reduced inductor and output capacitor count, the
FDMF68xx series saves up to 50% of board space as compared to conventional
discrete solutions. The FDMF68xx series dramatically reduces switch ringing,
using Fairchild’s high-performance PowerTrench
®
MOSFET technology, elimi-
nating the need for using a snubber circuit in most buck converter applications.
Advantages
• 93% at peak and 91% at 30A,
500KHz frequency; 12V
IN
, 1V
OUT
• 90% at peak and 88% at 30A,
1MHz frequency; 12V
IN
, 1V
OUT
• High current handling:
60A @ 100°C T
J
• Capable of operating up to
1.5MHz switching frequency
• Eliminates need for a
heat sink in typical designs
Applications
• Notebook or UltraBook
™
power systems
For more information, please visit:
fairchildsemi.com/pf/FD/FDMF6820A.html
fairchildsemi.com/pf/FD/FDMF6820B.html
fairchildsemi.com/pf/FD/FDMF6820C.html
fairchildsemi.com/pf/FD/FDMF6823A.html
fairchildsemi.com/pf/FD/FDMF6823B.html
fairchildsemi.com/pf/FD/FDMF6823C.html
fairchildsemi.com/pf/FD/FDMF6833C.html
fairchildsemi.com/pf/FD/FDMF6708N.html
Product
Number
3.3V Tri-State
FDMF6820A
FDMF6820B
FDMF6820C
5V Tri-State
FMDF6823A
FMDF6823B
FMDF6823C
30 BV
DSS
FDMF6833C
Notebook
FDMF6708N
45
5V Tri-State
Warning
ZCD
30
87.6%
84.4%
50
5V Tri-State
Warning
SMOD
30
89.3%
86.1%
60
55
50
5V Tri-State
5V Tri-State
5V Tri-State
Warning
Warning
Warning
SMOD
SMOD
SMOD
25
25
25
91.1%
90.8%
90%
89.2%
88.6%
87.4%
60
55
50
3.3V Tri-State
3.3V Tri-State
3.3V Tri-State
Warning
Warning
Warning
SMOD
SMOD
SMOD
25
25
25
91.1%
90.8%
90%
89.2%
88.6%
87.4%
i
OuT
(A)
PWM input
Thermal
Protection
SMOD
or ZCD
MOSFeT
BV
DSS
eff. @ 30A,
12V
iN
,
1V
OuT
,
500KHz
eff. @ 40A,
12V
iN
,
1V
OuT
,
500KHz
FDMS68xx Generation III XS
™
Multi-chip Mode Module Family
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