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BZD27C4V7P

Description
4.7 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB
CategoryDiscrete semiconductor    Zener diode   
File Size163KB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

BZD27C4V7P Overview

4.7 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB

BZD27C4V7P Parametric

Parameter NameAttribute value
Case StyleSOD-123FL
Pd(W)0.8
VZ(Min)4.4
VZ(Nom)4.7
VZ(Max)5.0
IZT(mA)100
IR(uA)10
VR(V)1
classDiodes
BZD27C Series
Voltage Regulator Diodes
BREAKDOWN VOLTAGE : 7 - 188 VOLTS
PEAK PULSE POWER : 150 WATTS
Features
Sillicon planar zener diodes.
Low profile surface-mount package.
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering guaranteed:
265℃/10 seconds, at terminals
1.9± 0.1
SOD-123FL
Cathode Band
Top View
2.8
±
0.1
1.4± 0.15
0.10-0.30
0.6
±
0.25
3.7
±
0.2
Mechanical Data
Case: JEDEC SOD-123FL molded plastic
Polarity: Color band denotes positive end
( cathode ) except for bidirectional
Marking code: see TABLE 1
Weight: 0.006 ounces, 0.02 grams
Mounting position: Any
Dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified
SYMBOL
Non-repetitive peak pulse power dissipation
with a 10/1000µs waveform (NOTE 1)
Power dissipation at T
A
=25℃ (NOTE 2)
Reverse current at stand-off voltage @ V
WM
Maximum instantaneous forward voltage at 0.2A
Thermal resistance junction to ambient
Operating temperature junction range
Storage temperature range
NOTES:(1)T
J
=25℃ prior to surge.
(2)Mounted on epoxy-glass PCB with 3×3 mm Cu pads(≥40µm thick)
(3)Non-repetitive peak reverse current in accordance with "IEC 60-1,Section 8" (10/1000
µs
pulse)
VALUE
1.0
±
0.2
UNITS
P
PPM
P
tot
I
R
V
F
R
θJA
T
J
T
STG
150
0.8
SEE TABLE 1
1.2
180
- 55 to +150
- 55 to +150
Watts
Watts
µA
Volts
K/W
http://www.luguang.cn
mail:lge@luguang.cn
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