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DAN222

Description
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    Small signal switching diode   
File Size259KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE

DAN222 Parametric

Parameter NameAttribute value
Case StyleSOT-523
IF(mA)100
Maximum recurrent peak reverse voltage80
TRR(nS)4.0
Maximum instantaneous forward voltage1.20
@IF(uA)0.1
Maximum reverse curre0.1
@VR70
classDiodes
DAN222
Surface Mount Fast Switching Diode
SOT-523
Features
Ultra-Small surface mount package.
Fast switching speed.
For general purpose switching
applications.
Low conductance.
Pb
Lead-free
Applications
General purpose switching application.
Dimensions in inches and (millimeters)
Ordering Information
Type No.
DAN222
Marking
N
Package Code
SOT-523
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
P
d
R
θJA
T
j,
T
stg
Parameter
DC reverse voltage
Peak reverse voltage
Forward continuous voltage
Peak forward current (max.)
Non-repetitive peak forward surge current
@t=1.0μs
Power dissipation
Thermal resistance junction to ambient
Junction and Storage Temperature
Value
80
80
100
300
Units
V
V
mA
mA
A
mW
℃/W
2.0
150
833
-55~150
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery Time
Symbol
V
(BR)R
I
R
V
F
C
D
t
rr
Test conditions
I
R
=100μA
V
R
=70V
I
F
=100mA
V
R
=6.0V,f=1MHz
I
F
=I
R
=5.0mA,I
rr
=0.1*I
R
,R
L
=100Ω
V
R
=6.0V
MIN
80
0.1
1.2
3.5
4.0
MAX
UNIT
V
μA
V
pF
ns
http://www.luguang.cn
mail:lge@luguang.cn
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