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BZM55C3V9

Description
3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    Zener diode   
File Size836KB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

BZM55C3V9 Overview

3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZM55C3V9 Parametric

Parameter NameAttribute value
Case StyleMICRO MELF
Pd(W)0.5
VZ(Min)3.7
VZ(Nom)3.9
VZ(Max)4.1
IZT(mA)5.0
IR(uA)40
VR(V)1
classDiodes
BZM55C Series
Zener Diodes
MINI-MELF
Features
Small surface mounting type
High reliability
Cathode indification
φ
.5±0.1
1
3.4
+0.3
-0.1
0.4±0.1
Applications
Voltage stabilization
Dimensions in millimeters
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
≦300K/W
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
-65~+175
Unit
mW
mA
Maximum Thermal Resistance
T
j
=25℃
Parameter
Junction ambient
Test Conditions
on PC board 50mm×50mm×1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
http://www.luguang.cn
mail:lge@luguang.cn
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