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LL101B

Description
50 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size194KB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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LL101B Overview

50 V, SILICON, SIGNAL DIODE

LL101B Parametric

Parameter NameAttribute value
Parts packaging codeSOD-80
Manufacturer packaging codeSOD-80
LL101A-LL101C
Schottky Barrier Rectifiers
VOLTAGE RANGE: 60 - 40 V
POWER DIDDIPATION:
400 mW
Features
For general purpose applications
The low forward voltage drop and fast switching
marking it ideal for protection of MOS devices,steering,
biasing and couping diodes for fast switching and low
logic level applications.
Integrated protection ring against static discharge
Low leakage current
3.4
+0.3
-0.1
MINI-MELF
Cathode indification
φ
.5±0.1
1
0.4±0.1
Mechanical Data
Case:
MINI-MELF
Polarity: Color band denotes cathode
Weight: Approx 0.031 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃,ambient temperature unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS AND THERMAL RESISTANCE
LL101A
Reverse voltage
Repetitive peak reverse voltage
Forward current
Maximum single cycle surge 10
µs
square wave
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature range
1)
LL101B
50
50
30
2.0
400
320
1)
125
- 55 --- + 150
LL101C
40
40
Unit
V
V
mA
A
mW
K/W
V
R
V
RRM
I
(AV)
I
FSM
P
tot
R
θJA
T
j
T
STG
60
60
Device mounted on PC
board
50mm×50mm×1.6mm
.
http://www.luguang.cn
mail:lge@luguang.cn

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Parts packaging code SOD-80 - SOD-80
Manufacturer packaging code SOD-80 - SOD-80
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