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BLF6G15L-40RN_15

Description
Power LDMOS transistor
File Size237KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF6G15L-40RN_15 Overview

Power LDMOS transistor

BLF6G15L-40RN;
BLF6G15LS-40RN
Power LDMOS transistor
Rev. 2 — 14 May 2012
Product data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
1476 to 1511
V
DS
(V)
28
P
L(AV)
(W)
2.5
G
p
(dB)
22.5
D
(%)
13.5
ACPR
(dBc)
45
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at probability of 0.01 % on CCDF carrier;
carrier spacing 5 MHz.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz,
a supply voltage of 28 V and an I
Dq
of 375 mA:
Average output power = 2.5 W
Power gain = 22.5 dB
Efficiency = 13.5 %
ACPR =
45
dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1450 MHz to 1550 MHz frequency range

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