SR860 datasheet, PDF - EEWORLD Datasheet

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SR860: Description8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA; CategoryDiscrete semiconductor Schottky diode; File Size165KB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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SR860 Overview

8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA

SR860 Parametric

Parameter Name	Attribute value
Case Style	DO-27
IF（A）	8
Maximum recurrent peak reverse voltage	60
Peak forward surge current	150
Maximum instantaneous forward voltage	0.7
@IF(A)	8
Maximum reverse current	2.5
TJ(℃）	/
class	Diodes

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8.0A Schottky Barrier Rectifiers

SR820-SR860

TO-220AC

.185(4.70)

.175(4.44)

Features

Low forward voltage drop

High current capability

High reliability

High surge current capability

Epitaxial construction

.113(2.87)

.103(2.62)

.412(10.5)

MAX

DIA

.154(3.91)

.148(3.74)

.27(6.86)

.23(5.84)

.594(15.1)

.587(14.9)

.055(1.40)

.045(1.14)

PIN1

.16(4.06)

.14(3.56)

.11(2.79)

.10(2.54)

.56(14.22)

.53(13.46)

.037(0.94)

.027(0.68)

Mechanical Data

Case: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Polarity: As Marked

Mounting position: Any

Weight: 2.24 grams

.205(5.20)

.195(4.95)

.025(0.64)

.014(0.35)

PIN 1

PIN 2

CASE

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

See Fig. 1

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 8.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note1)

Typical Thermal Resistance RqJC (Note 2)

Operating Temperature Range T

Storage Temperature Range T

STG

NOTES:

SR820 SR830 SR835 SR840 SR845 SR850 SR860 UNITS

8.0

150

0.65

5.0

700

3.0

-65

+125

-65

+150

-65

+150

460

0.75

C/W

Ta=100 C

1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance Junction to Case.

http://www.luguang.cn

mail:lge@luguang.cn

SR860 Related Products

	SR860	SR820	SR830	SR835	SR840	SR845	SR850
Description	8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA	8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA	8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA	8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA	8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA	8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA	8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA
Case Style	DO-27	-	DO-27	-	DO-27	-	DO-27
IF（A）	8	-	8	-	8	-	8
Maximum recurrent peak reverse voltage	60	-	30	-	40	-	50
Peak forward surge current	150	-	150	-	150	-	150
Maximum instantaneous forward voltage	0.7	-	0.55	-	0.55	-	0.7
@IF(A)	8	-	8	-	8	-	8
Maximum reverse current	2.5	-	2.5	-	2.5	-	2.5
TJ(℃）	/	-	/	-	/	-	/
class	Diodes	-	Diodes	-	Diodes	-	Diodes

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