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RS3AB

Description
3 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    Fast recovery diode   
File Size156KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

RS3AB Overview

3 A, 50 V, SILICON, RECTIFIER DIODE

RS3AB Parametric

Parameter NameAttribute value
Case StyleSMB
IVA(A)3.0
VRRM (V)50
IFSM (A)100
VF (V)1.3
@IVA(A)3.0
Maximum reverse current5.0
TRR(nS)150
classDiodes
RS3AB-RS3MB
Surface Mount Rectifiers
REVERSE VOLTAGE: 50 --- 1000 V
CURRENT:
3.0
A
Features
Plastic package has
underwriters laborator
flammability classification
94V-0
For surface mounted applications
2.0± 0.15
DO - 214AA(SMB)
111
4.7± 0.25
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
11 1
250
o
C/10 seconds at terminals
5.4± 0.2
Mechanical Data
Case:JEDEC DO-214AA,molded plastic over
11 11passivated
chip
Polarity: color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
2.3± 0.15
1.3± 0.2
0.203MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
Dimensions in millimeters
RS3AB RS3BB RS3DB RS3GB RS3JB RS3KB RS3MB UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forword rectified current at
c
T
L
=90
O
C
Peak forward surge current @ T
L
= 110°C 8.3ms
c
single half-sine-wave superimposed on rated
c
load
Maximum instantaneous forward voltage at
3.0A
Maximum DC reverse current
at rated DC blockjing voltage
@T
A
=25
o
C
@T
A
=125
o
C
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
3.0
100.0
1.30
5.0
200.0
600
420
600
800
560
800
1000
700
100
3.6± 0.3
0.2± 0.05
Low profile package
V
V
V
A
A
V
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resitance (NOTE 3)
Operating junction and storage temperature range
150
32
40.0
250
500
ns
pF
o
C/W
o
-55--------+150
C
NOTE: 1.Reverse recovery time test conditions:I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
3. Thermal resistance from junction to ambient and junction to lead P.C.B.mounted on 0.2''X0.2''(5.0X5.0mm
2
) copper pad areas
http://www.luguang.cn
mail:lge@luguang.cn

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RS3AB RS3BB RS3DB RS3GB RS3JB RS3KB RS3MB
Description 3 A, 50 V, SILICON, RECTIFIER DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE
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