2SA684R-BP datasheet, PDF - EEWORLD Datasheet

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2SA684R-BP: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC, TO-92L, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size319KB，3 Pages; ManufacturerMicro Commercial Components (MCC)

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2SA684R-BP Overview

Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC, TO-92L, 3 PIN

2SA684R-BP Parametric

Parameter Name	Attribute value
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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MCC

TM

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SA684

Features

x

Low Frequency Power Amplifier.

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

and MSL Rating 1

PNP

Epitaxial

Silicon Transistor

TO-92L

Maximum Ratings

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

C

T

J

T

STG

Symbol

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Collector power dissipation

Junction Temperature

Storage Temperature

Parameter

Collector-Base Breakdown Voltage

(I

C

=-10 Adc, I

E

=0)

Collector-Emitter Breakdown Voltage

(I

C

=-2mAdc, I

B

=0)

Emitter-Base Breakdown Voltage

(I

E

=-10uAdc, I

C

=0)

Collector Cutoff Current

(V

CB

=-20Vdc,I

E

=0)

Rating

-50

-60

-5.0

-1.0

0.75

-55 to +150

Min

-60

-50

-5.0

---

Typ

---

Max

---

-100

Unit

V

A

W

O

C

O

C

Units

Vdc

nAdc

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

OFF CHARACTERISTICS

BV

CBO

BV

CEO

BV

EBO

I

CBO

B

C

E

ON CHARACTERISTICS

DC Current gain

85

(I

C

=-500mAdc, V

CE

=-10Vdc)

V

BE(sat)

Base-Emitter Saturation Voltage

---

(I

B

=-50mAdc, I

C

=-500mAdc)

V

CE(sat)

Collector-Emitter Saturation Voltage

---

(I

C

=-500mAdc, I

B

=-50mAdc)

f

T

Current Gain Bandwidth Product

---

(V

CE

=-10Vdc, I

C

=50mAdc,f=200MHz)

C

ob

Output Capacitance

---

(V

CB

=-10Vdc, I

E

=0, f=1.0MHz)

(1) h

FE

Classification Q: 85~170, R: 120~240 ,S:170~340

h

FE

---

-0.85

-0.2

200

20

340

-1.2

-0.4

---

30

---

Vdc

MHz

pF

DIM

A

B

C

D

E

F

G

H

J

K

L

M

DIMENSIONS

INCHES

MM

MIN

MAX

MIN

MAX

3.700

4.10

.146

.161

4.000

---

.157

---

0.063

---

1.600

0.350

0.450

.014

.018

.050

.062

1.280

1.580

4.700

5.100

.185

.201

.307

.323

7.800

8.200

13.80

14.20

.543

.559

.600

.800

.024

.031

.014

.050

.096

.104

2.440

.022

0.350

1.270

2.640

.550

NOTE

www.mccsemi.com

Revision:

1

1 of

3

2010/12/02

2SA684R-BP Related Products

	2SA684R-BP	2SA684S-BP	2SA684Q-BP
Description	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC, TO-92L, 3 PIN
Parts packaging code	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3
Reach Compliance Code	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	170	85
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz
Base Number Matches	1	1	1

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