BLF6G22LS-100_15 datasheet, PDF

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BLF6G22LS-100_15: DescriptionPower LDMOS transistor; File Size130KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BLF6G22LS-100_15 Overview

Power LDMOS transistor

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BLF6G22LS-100

Power LDMOS transistor

Rev. 3 — 12 November 2010

Product data sheet

1. Product profile

1.1 General description

100 W LDMOS power transistor for base station applications at frequencies from

2000 MHz to 2200 MHz.

Table 1.

Typical performance

RF performance at T

case

= 25

C in a common source class-AB production test circuit.

Mode of operation

2-carrier W-CDMA

[1]

(MHz)

2110 to 2170

(V)

L(AV)

(W)

(dB)

18.2

(%)

IMD3

(dBc)

−37

[1]

ACPR

(dBc)

−41

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;

carrier spacing 10 MHz.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a

supply voltage of 28 V and an I

of 950 mA:

Average output power = 25 W

Gain = 18.2 dB

Efficiency = 29 %

IMD3 =

−37

dBc

ACPR =

−41

dBc

Easy power control

Integrated ESD protection

Excellent ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (2000 MHz to 2200 MHz)

Internally matched for ease of use

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

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